1. Schematic illustration for the preparation of the Te nanowire and flexible film

2. FESEM images of Te nanowires obtained by the solution without ascorbic acid at (a) 140, (b)160, (c) 180 and (d) 200 ℃, and with ascorbic acid at (e) 140, (f) 160, (g) 180 and (h) 200 ℃

3. XRD pattern of TN160 film

4. (a) Low-magnification, (b) high-magnification TEM images and (c) Fourier transformation pattern of TN160

5. (a) Seebeck coefficients, (b) electrical conductivities, (c) power factors of Te nanowire films prepared under different conditions; Surface FESEM images of (d) ATN160 and (g) TN160 films with insets showing corresponding cross-sectional FESEM images; Digital photos of film (1 cm×2 cm) resistance tests for (e) ATN160 and (f) TN160 films

6. (a-d) Digital photos of film (1 cm×2 cm) resistance test and (e-h)FESEM surface images of TN160 film (a, e) without and with wet press at (b, f)10, (c, g) 20, (d, h) 30 MPa; (i, k) Cross-sectional and (j, l) high-magnification cross-sectional FESEM images of TN160 films (i, j) without and (k, l) with wet press at 30 MPa

7. (a) Electrical conductivity, (b) Seebeck coefficient and (c) power factor of TN160 film before and after wet press

8. Carrier concentration and carrier mobility of TN160 film with wet press at different pressures