Researching | Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers

Journal of Semiconductors, Volume. 45, Issue 2, 022101(2024)

Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers

Karolis Stašys^*, Andrejus Geižutis, and Jan Devenson

Author Affiliations

State Research Institute Center for Physical Sciences and Technology, Savanorių ave. 231, LT-02300 Vilnius, Lithuania

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References(12)

[1] U Willer, M Saraji, A Khorsandi et al. Near- and mid-infrared laser monitoring of industrial processes, environment and security applications. Opt Lasers Eng, 44, 699(2006).

[2] J Faist, F Capasso, D L Sivco et al. Quantum cascade laser. Science, 264, 553(1994).

[3] X X Liu, Z W Li, Z J Wen et al. Large-area, lithography-free, narrow-band and highly directional thermal emitter. Nanoscale, 11, 19742(2019).

[4] G Y Lu, J R Nolen, T G Folland et al. Narrowband polaritonic thermal emitters driven by waste heat. ACS Omega, 5, 10900(2020).

[5] J Y Wu, Z T Xie, Y H Sha et al. Epsilon-near-zero photonics: Infinite potentials. Photon Res, 9, 1616(2021).

[6] Y C Jun, T S Luk, A Robert Ellis et al. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. Appl Phys Lett, 105, 13(2014).

[7] J S Hwang, J Xu, A P Raman. Simultaneous control of spectral and directional emissivity with gradient epsilon-near-zero InAs photonic structures. Adv Mater, 35, 2302956(2023).

[8] C Argyropoulos, K Q Le, N Mattiucci et al. Broadband absorbers and selective emitters based on plasmonic Brewster metasurfaces. Phys Rev B, 87, 205112(2013).

[9] S Law, R Y Liu, D Wasserman. Doped semiconductors with band-edge plasma frequencies. J Vac Sci Technol B, 32, 325(2014).

[10] M Q Liu, S Xia, W J Wan et al. Broadband mid-infrared non-reciprocal absorption using magnetized gradient epsilon-near-zero thin films. Nat Mater, 22, 1196(2023).

[11] M Shiba, R Ikariyama, M Takushima et al. Properties of low-temperature-grown InAs and their changes upon annealing. J Cryst Growth, 301/302, 256(2007).

[12] A Ciattoni, A Marini, C Rizza et al. Polariton excitation in epsilon-near-zero slabs: Transient trapping of slow light. Phys Rev A, 87, 053853(2013).

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Karolis Stašys, Andrejus Geižutis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101

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Paper Information

Category: Articles

Received: Jul. 11, 2023

Accepted: --

Published Online: Apr. 24, 2024

The Author Email: Stašys Karolis (KSta?ys)

DOI:10.1088/1674-4926/45/2/022101

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology