Journal of Semiconductors, Volume. 45, Issue 2, 022101(2024)
Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers
Fig. 1. (Color online) Structure of samples grown using molecular beam epitaxy.
Fig. 2. (Color online) Experimental setup for powering-up the epitaxial structures and measuring thermal emission.
Fig. 3. (Color online) High-resolution X-ray diffraction rocking curves from samples VGS0055 (a) (grown on a GaSb substrate) and VIA0027 (b) (grown on an InAs substrate).
Fig. 4. (Color online) Nomarski microscopy surface images of the samples VGS0055 (a) and VIA0027 (b). The scale bar at the bottom right represents 20 µm.
Fig. 5. (Color online) Reflectance (black) and thermal emission (red) spectra measured on samples VGS0055 (a) and VIA0027 (b).
Fig. 6. P-polarised emission intensity dependence on the sample orientation. 0 degrees position corresponds to the polarisation plate p-orientation along [001] direction. (a) Sample VIA0027, (b) sample VGS0055.
Fig. 7. (Color online) Thermal emission spectra measured of both samples at different excitation temperatures. (a) Sample VIA0027, (b) sample VGS0055.
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Karolis Stašys, Andrejus Geižutis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101
Category: Articles
Received: Jul. 11, 2023
Accepted: --
Published Online: Apr. 24, 2024
The Author Email: Stašys Karolis (KSta?ys)