Fig. 1. Epitaxial structure of the InGaN-based green laser diode

Fig. 2. Refractive index of In_xGa_1-xN with x composition 0.04-0.08 at the wavelength of 525 nm

Fig. 3. Refractive index profiles and intensity distributions of TE-modes versus the different n-In_xGa_1−xN waveguide indium content ((b) is the magnification of (a) from 550 nm to 1050 nm)

Fig. 4. Optical loss outside multiple quantum wells ( α_out) (a), optical loss in multiple quantum wells (α_QW) (b) and total optical loss (α_Total) (c) of laser diode versus the injected current for different n-In_xGa_1−xN waveguide indium content (The arrow indicates 0.5 A or 6 kA/cm²)

Fig. 5. Leakage current density (a), injection efficiency (b) and IQE (c) of laser diode versus the injected current for different n-In_xGa_1−xN waveguide indium content

Fig. 6. Band energy versus of different n-In_xGa_1−xN waveguide indium contents at injection current 0.5 A (Injection density is 6 kA/cm²）

Fig. 6. [in Chinese]

Fig. 7. Curves of nonradiative current density (a), SRH current density (b), Auger current density (c) and active region carrier concentration (d) versus injected current at different indium components of n-In_xGa_1−xN waveguide layers

Fig. 8. Threshold current (a) and voltage (b) of laser diode with n-In_xGa_1−xN waveguide indium contents versus injected current

Fig. 9. Simulated power (a) and conversion efficiency (b) of laser diode with n-In_xGa_1−xN waveguide indium contents versus injected current