Journal of Synthetic Crystals, Volume. 52, Issue 9, 1570(2023)

Study on the Influence of Miscut-Angle on the Processing of β-Ga2O3(100) Plane Substrate

LI Xinru1,*... HOU Tong1, MA Xu1, WANG Pei1, LI Yang1, MU Wenxiang1, JIA Zhitai1,2 and TAO Xutang1 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(12)

    [1] [1] YUAN Y, HAO W B, MU W X, et al. Toward emerging gallium oxide semiconductors: a roadmap[J]. Fundamental Research, 2021, 1(6): 697-716.

    [2] [2] MU W X, JIA Z T, YIN Y R, et al. High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method[J]. Journal of Alloys and Compounds, 2017, 714: 453-458.

    [3] [3] HE Q M, MU W X, DONG H, et al. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics[J]. Applied Physics Letters, 2017, 110(9): 093503.

    [4] [4] HIGASHIWAKI M, SASAKI K, KURAMATA A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates[J]. Applied Physics Letters, 2012, 100(1): 013504.

    [7] [7] SUN H D, MITRA S, SUBEDI R C, et al. Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate[J]. Advanced Functional Materials, 2019, 29(48): 1905445.

    [8] [8] OUGAZZADEN A, GAUTIER S, SARTEL C, et al. BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas[J]. Journal of Crystal Growth, 2007, 298: 316-319.

    [9] [9] BIN ANOOZ S, GRNEBERG R, WOUTERS C, et al. Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE[J]. Applied Physics Letters, 2020, 116(18): 182106.

    [10] [10] BIN ANOOZ S, GRNEBERG R, CHOU T S, et al. Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE[J]. Journal of Physics D: Applied Physics, 2021, 54(3): 034003.

    [11] [11] SCHEWSKI R, BALDINI M, IRMSCHER K, et al. Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates: a quantitative model[J]. Journal of Applied Physics, 2016, 120(22): 225308.

    [12] [12] SCHEWSKI R, LION K, FIEDLER A, et al. Step-flow growth in homoepitaxy of β-Ga2O3 (100): the influence of the miscut direction and faceting[J]. APL Materials, 2019, 7(2): 022515.

    [13] [13] ZHOU H, WEI J H, SONG F, et al. Analysis of the grinding characteristics of β-Ga2O3 crystal on different planes[J]. Journal of Advanced Manufacturing Systems, 2020, 19(2): 235-248.

    [14] [14] HUANG C J, ZHOU H, ZHU Y W, et al. Effect of chemical action on the chemical mechanical polishing of β-Ga2O3(100) substrate[J]. Precision Engineering, 2019, 56: 184-190.

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    LI Xinru, HOU Tong, MA Xu, WANG Pei, LI Yang, MU Wenxiang, JIA Zhitai, TAO Xutang. Study on the Influence of Miscut-Angle on the Processing of β-Ga2O3(100) Plane Substrate[J]. Journal of Synthetic Crystals, 2023, 52(9): 1570

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    Paper Information

    Category:

    Received: Mar. 27, 2023

    Accepted: --

    Published Online: Oct. 7, 2023

    The Author Email: Xinru LI (1052965637@qq.com)

    DOI:

    CSTR:32186.14.

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