Journal of Applied Optics, Volume. 45, Issue 3, 568(2024)
Influence of laser energy density on thermal stress at photosensitive layer of CMOS detector
Figures & Tables(9)
Fig. 1. Diagram of CMOS photodetector structure and simulation structure
Fig. 3. Temporal evolution of temperature at photosensitive surface center of CMOS photodetector irradiated by nanosecond pulse laser
Fig. 4. Variation curve of peak temperature evolution with pulse laser energy density at photosensitive surface center of CMOS photodetector irradiated by nanosecond pulse laser
Fig. 5. Spatial distribution of axial temperature in CMOS photodetector irradiated by nanosecond pulse laser
Fig. 6. Variation curve of temperature difference evolution with pulse laser energy density at photosensitive surface center of CMOS photodetector irradiated by nanosecond pulse laser
Fig. 7. Spatial distribution of thermal stress in CMOS photodetector irradiated by nanosecond pulse laser under different incident pulse laser energy density
Fig. 8. Variation curve of maximum thermal stress evolution with pulse laser energy density of CMOS photodetector irradiated by nanosecond pulse laser
Table 1. Parameters of material thermal properties
View tableView in ArticleTable 1. Parameters of material thermal properties
Parameters Al SiO2 Si Density/kg·m−3 2700 2640 2330 Coefficient of thermal conductivity/W·m−1·K−1 238 1.3 148 Specific heat capacity/J·kg−1·K−1 900 787 700 Coefficient of thermal expansion/K−1 1.37×10−5 5.0×10−7 7.8×10−6 Poisson ratio 0.33 0.17 0.28 Melting point/K 933 1973 1687
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Jinqi DAI, Hailong YU, Junguang WANG, Xun GAO. Influence of laser energy density on thermal stress at photosensitive layer of CMOS detector[J]. Journal of Applied Optics, 2024, 45(3): 568
Paper Information
Category: Research Articles
Received: Oct. 31, 2023
Accepted: --
Published Online: Jun. 2, 2024
The Author Email: GAO Xun (高勋（1978—）)
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