[1] A J Green, J Speck, G Xing et al. β-Gallium oxide power electronics. APL Mater, 10, 029201(2022).

[2] Y Yuan, W B Hao, W X Mu et al. Toward emerging gallium oxide semiconductors: A roadmap. Fundam Res, 1, 697(2021).

[3] H Chen, H Y Wang, C Wang et al. Low specific on-resistance and low leakage current β-Ga2O3 (001) Schottky barrier diode through contact pre-treatment. 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 145(2022).

[4] Q M He, W B Hao, X Z Zhou et al. Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 43, 264(2022).

[5] C X Hou, R M Gazoni, R J Reeves et al. Oxidized metal Schottky contacts on (010) β-Ga2O3. IEEE Electron Device Lett, 40, 337(2019).

[6] G Z Jian, W B Hao, Z Y Shi et al. Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes. J Phys D: Appl Phys, 55, 304003(2022).

[7] T Harada, S Ito, A Tsukazaki. Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation. Sci Adv, 5, eaax5733(2019).

[8] W H Xiong, X Z Zhou, G W Xu et al. Double-barrier β-Ga2O3 Schottky barrier diode with low turn-on voltage and leakage current. IEEE Electron Device Lett, 42, 430(2021).

[9] R Lingaparthi, K Sasaki, Q T Thieu et al. Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes. Appl Phys Express, 12, 074008(2019).

[10] W B Hao, Q M He, K Zhou et al. Low defect density and small I–V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2. Appl Phys Lett, 118, 043501(2021).

[11] K Konishi, K Goto, H Murakami et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl Phys Lett, 110, 103506(2017).

[12] S Roy, A Bhattacharyya, C Peterson et al. 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate. Appl Phys Lett, 122, 152101(2023).

[13] Q M He, X Z Zhou, Q Y Li et al. Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications. IEEE Electron Device Lett, 43, 1933(2022).

[14] C H Lin, Y Yuda, M H Wong et al. Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation. IEEE Electron Device Lett, 40, 1487(2019).

[15] X Lu, X Zhang, H X Jiang et al. Vertical β-Ga2O3 Schottky barrier diodes with enhanced breakdown voltage and high switching performance. Phys Status Solidi A, 217, 1900497(2020).

[16] W B Hao, Q M He, X Z Zhou et al. 2.6 kV NiO/Ga2O3 heterojunction diode with superior high-temperature voltage blocking capability. 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 105(2022).

[17] W B Hao, F H Wu, W S Li et al. High-performance vertical β-Ga2O3 Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity. 2022 International Electron Devices Meeting (IEDM), 9.5.1(2023).

[18] W B Hao, F H Wu, W S Li et al. Improved vertical β-Ga2O3 Schottky barrier diodes with conductivity-modulated p-NiO junction termination extension. IEEE Trans Electron Devices, 70, 2129(2023).

[19] K Sasaki, D Wakimoto, Q T Thieu et al. First demonstration of Ga2O3 trench MOS-type Schottky barrier diodes. IEEE Electron Device Lett, 38, 783(2017).

[20] W S Li, K Nomoto, Z Y Hu et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/Ron, Rsp of up to 0.95 GW//cm2. IEEE Electron Device Lett, 41, 107(2020).

[21] W S Li, K Nomoto, Z Y Hu et al. Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes. Appl Phys Express, 12, 061007(2019).

[22] W Li, K Nomoto, Z Hu et al. Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV. 2019 IEEE International Electron Devices Meeting (IEDM), 12.4.1(2020).

[23] M H Wong, H Murakami, Y Kumagai et al. Enhancement-mode β-Ga2O3 current aperture vertical MOSFETs with N-ion-implanted blocker. IEEE Electron Device Lett, 41, 296(2020).

[24] K Zeng, R Soman, Z L Bian et al. Vertical Ga2O3 MOSFET with magnesium diffused current blocking layer. IEEE Electron Device Lett, 43, 1527(2022).

[25] X Z Zhou, Y J Ma, G W Xu et al. Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing. Appl Phys Lett, 121, 223501(2022).

[26] D Wakimoto, C H Lin, Q T Thieu et al. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2V–1s–1. Appl Phys Express, 16, 036503(2023).

[27] Y J Ma, X Z Zhou, W B Tang et al. 702.3 A·cm−2/10.4 mΩ·cm2 β-Ga2O3 U-shape trench gate MOSFET with N-ion implantation. IEEE Electron Device Lett, 44, 384(2023).