Journal of Semiconductors, Volume. 44, Issue 7, 070301(2023)
Vertical β-Ga2O3 power electronics
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Fig. 1. (Color online) The schematic diagram of the roadmap and structures for SBDs. Surface engineering technique (a), and edge termination techniques (b-e) have emerged in recent years.
Fig. 2. (Color online) The schematic diagram of four kinds of vertical transistors, (a) fin field-effect transistor (FinFET), (b) current aperture vertical electron transistor (CAVET), (c) vertical diffused barrier field-effect transistor (VDBFET), and (d) U-shaped gate trench MOSFET (U-MOSFET).
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Guangwei Xu, Feihong Wu, Qi Liu, Zhao Han, Weibing Hao, Jinbo Zhou, Xuanze Zhou, Shu Yang, Shibing Long. Vertical β-Ga2O3 power electronics[J]. Journal of Semiconductors, 2023, 44(7): 070301
Paper Information
Category: Articles
Received: Jun. 26, 2023
Accepted: --
Published Online: Aug. 7, 2023
The Author Email: Xu Guangwei (xugw@ustc.edu.cn), Wu Feihong (xugw@ustc.edu.cn), Liu Qi (xugw@ustc.edu.cn), Han Zhao (xugw@ustc.edu.cn), Hao Weibing (xugw@ustc.edu.cn), Zhou Jinbo (xugw@ustc.edu.cn), Zhou Xuanze (xugw@ustc.edu.cn), Yang Shu (xugw@ustc.edu.cn), Long Shibing (shibinglong@ustc.edu.cn)
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