Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Yuting Chen; Xinlv Duan; Xueli Ma; Peng Yuan; Zhengying Jiao; Yongqing Shen; Liguo Chai; Qingjie Luan; Jinjuan Xiang; Di Geng; Guilei Wang; Chao Zhao

doi:10.1088/1674-4926/24010032

Journal of Semiconductors, Volume. 45, Issue 7, 072301(2024)

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Yuting Chen¹, Xinlv Duan², Xueli Ma^1、*, Peng Yuan¹, Zhengying Jiao¹, Yongqing Shen¹, Liguo Chai¹, Qingjie Luan¹, Jinjuan Xiang^1、**, Di Geng², Guilei Wang^1、***, and Chao Zhao¹

Author Affiliations

¹Beijing Superstring Academy of Memory Technology, Beijing 100176, China

²State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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References(20)

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Yuting Chen, Xinlv Duan, Xueli Ma, Peng Yuan, Zhengying Jiao, Yongqing Shen, Liguo Chai, Qingjie Luan, Jinjuan Xiang, Di Geng, Guilei Wang, Chao Zhao. Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel[J]. Journal of Semiconductors, 2024, 45(7): 072301

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Paper Information

Category: Articles

Received: Jan. 22, 2024

Accepted: --

Published Online: Jul. 18, 2024

The Author Email: Ma Xueli (XLMa), Xiang Jinjuan (JJXiang), Wang Guilei (GLWang)

DOI:10.1088/1674-4926/24010032

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