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Journal of Semiconductors, Volume. 45, Issue 7, 072301(2024)

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Yuting Chen1, Xinlv Duan2, Xueli Ma1、*, Peng Yuan1, Zhengying Jiao1, Yongqing Shen1, Liguo Chai1, Qingjie Luan1, Jinjuan Xiang1、**, Di Geng2, Guilei Wang1、***, and Chao Zhao1
Author Affiliations
  • 1Beijing Superstring Academy of Memory Technology, Beijing 100176, China
  • 2State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    (Color online) (a) The structure of IGZO TET with a CAA structure; (b) the process flow of CAA IGZO TFT fabrication.

    Fig. 1. (Color online) (a) The structure of IGZO TET with a CAA structure; (b) the process flow of CAA IGZO TFT fabrication.

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    (Color online) Schematic of the growth process of IGZO thin films.

    Fig. 2. (Color online) Schematic of the growth process of IGZO thin films.

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    (Color online) O 1s XPS spectra with deconvoluted sub-peaks of IGZO films with various In2O3 sub-cycles. (a) 311; (b) 411; (c) 511; (d) 611; (e) 911.

    Fig. 3. (Color online) O 1s XPS spectra with deconvoluted sub-peaks of IGZO films with various In2O3 sub-cycles. (a) 311; (b) 411; (c) 511; (d) 611; (e) 911.

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    (Color online) Changes of carrier concentration, resistivity and hall mobility for 311, 611, and 911 IGZO films.

    Fig. 4. (Color online) Changes of carrier concentration, resistivity and hall mobility for 311, 611, and 911 IGZO films.

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    (Color online) (a) Optical microscopic top view of the CAA-TFT structure; (b) schematic front view and (c) cross-sectional TEM image of the CAA-TFT structure; (d) EDS mapping of the elemental distributions of each film layer.

    Fig. 5. (Color online) (a) Optical microscopic top view of the CAA-TFT structure; (b) schematic front view and (c) cross-sectional TEM image of the CAA-TFT structure; (d) EDS mapping of the elemental distributions of each film layer.

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    (Color online) Transfer and output characteristics of (a, d) 311, (b, e) 611, and (c, f) 911 IGZO CAA-TFTs.

    Fig. 6. (Color online) Transfer and output characteristics of (a, d) 311, (b, e) 611, and (c, f) 911 IGZO CAA-TFTs.

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    • Table 1. Atomic percentage of IGZO thin films with various In2O3 sub-cycles.

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      Table 1. Atomic percentage of IGZO thin films with various In2O3 sub-cycles.

      SampleIn (%)Ga (%)Zn (%)O (%)In/GaZn/Ga
      31118.2313.3417.5550.771.361.3
      41121.0311.1415.1652.681.891.36
      51122.3810.3415.0252.262.161.45
      61124.359.5413.2952.822.551.39
      91128.747.229.3954.653.981.3
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    Yuting Chen, Xinlv Duan, Xueli Ma, Peng Yuan, Zhengying Jiao, Yongqing Shen, Liguo Chai, Qingjie Luan, Jinjuan Xiang, Di Geng, Guilei Wang, Chao Zhao. Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel[J]. Journal of Semiconductors, 2024, 45(7): 072301

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    Paper Information

    Category: Articles

    Received: Jan. 22, 2024

    Accepted: --

    Published Online: Jul. 18, 2024

    The Author Email: Ma Xueli (XLMa), Xiang Jinjuan (JJXiang), Wang Guilei (GLWang)

    DOI:10.1088/1674-4926/24010032

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology