[1] T Y WANG, J L MENG, L CHEN et al. Flexible 3D memristor array for binary storage and multi-states neuromorphic computing applications. InfoMat, 212(2021).

[2] X HAN, Y Xu, B Sun et al. Highly transparent flexible artificial nociceptor based on forming-free ITO memristor. Applied Physics Letters, 094103(2022).

[3] H L PARK, Y LEE, N KIM et al. Flexible neuromorphic electronics for computing, soft robotics, and neuroprosthetics. Advanced Materials, 1903558(2020).

[4] Z Y LI, L Q ZHU, L Q GUO et al. Mimicking neurotransmitter activity and realizing algebraic arithmetic on flexible protein-gated oxide neuromorphic transistors. ACS Applied Materials & Interfaces, 7784(2021).

[5] H X LI, J Y HU, A Z CHEN et al. Single-transistor neuron with excitatory-inhibitory spatiotemporal dynamics applied for neuronal oscillations. Advanced Materials, 2207371(2022).

[6] P STOLIAR, J TRANCHANT, B CORRAZE et al. A leaky integrate-and-fire neuron analog realized with a Mott insulator. Advanced Functional Materials, 1604740(2017).

[7] Y BO, P ZHANG, Z LUO et al. NbO₂ memristive neurons for burst-based perceptron. Advanced Intelligent Systems, 2000066(2020).

[8] J Q YANG, R WANG, Z P WANG et al. Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks. Nano Energy, 74: 104828(2020).

[9] Q W SHI, J WANG, I AZIZ et al. Stretchable and wearable resistive switching random-access memory. Advanced Intelligent Systems, 2000007(2020).

[10] P CHEN, X ZHANG, Z WU et al. High-yield and uniform NbO_x-based threshold switching devices for neuron applications. IEEE Transactions on Electron Devices, 2391(2022).

[11] Q HUA, H Q WU, B GAO et al. Low-voltage oscillatory neurons for memristor-based neuromorphic systems. Global Challenges, 1900015(2019).

[12] Y XU, H WANG, D YE et al. Electrohydrodynamically printed flexible organic memristor for leaky integrate and fire neuron. IEEE Electron Device Letters, 116(2021).

[13] J X ZHU, X ZHANG, M R WANG et al. Flexible memristive spiking neuron for neuromorphic sensing and computing. Acta Physica Sinica, 338(2022).

[14] X YI, Z YU, X NIU et al. Intrinsically stretchable resistive switching memory enabled by combining a liquid metal-based soft electrode and a metal-organic framework insulator. Advanced Electronic Materials, 1800655(2019).

[15] M YANG, X ZHAO, Q TANG et al. Stretchable and conformable synapse memristors for wearable and implantable electronics. Nanoscale, 18135(2018).

[16] D X TANG, J Y LIU, Y X WANG et al. Research progress in flexible resistive random access memory materials. J, 81(2020).

[17] B YUAN, C ZHAO, X SUN et al. Lightweight liquid metal entity. Advanced Functional Materials, 1910709(2020).

[18] Y LU, S GAO, F LI et al. Stretchable and twistable resistive switching memory with information storage and computing functionalities. Advanced Materials Technologies, 2000810(2021).

[19] S Y ZHAN, Q G WANG, X L WANG et al.

[20] P LU, Z QU, Q WANG et al. Nonlinear conductive behaviour of silver nanowires/silicone rubber composites. IOP Conference Series: Materials Science and Engineering, 012052(2018).

[21] M WANG, W WANG, W R LEOW et al. Enhancing the matrix addressing of flexible sensory arrays by a highly nonlinear threshold switch. Advanced Materials, 1802516(2018).

[22] W WANG, M WANG, E AMBSOLI et al. Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices. Nature Communications, 81(2019).

[23] H W ZHU, H L GAO, H Y ZHAO et al. Printable elastic silver nanowire-based conductor for washable electronic textiles. Nano Research, 2879(2020).

[25] J YANG, J CAO, J HAN et al. Stretchable multifunctional self-powered systems with Cu-EGaIn liquid metal electrodes. Nano Energy, 101: 107582(2022).

[26] V V ZHIRNOV, R MEADE, R K CAVIN et al. Scaling limits of resistive memories. Nanotechnology, 254027(2011).

[27] D Q LIU, N WANG, G WANG et al. Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO₃ thin films deposited by radio frequency magnetron sputtering. Applied Physics Letters, 134105(2013).

[28] G MILANO, M AONO, L BOARINO et al. Quantum conductance in memristive devices: fundamentals, developments, and applications. Advanced Materials, 2201248(2022).

[29] C H HUANG, K MATSUZAKI, K NOMURA. Threshold switching of non-stoichiometric CuO nanowire for selector application. Applied Physics Letters, 023503(2020).

[31] L YAN, Y PEI, J WANG et al. High-speed Si films based threshold switching device and its artificial neuron application. Applied Physics Letters, 153507(2021).

[32] C ADDA, B CORRAZE, P STOLIAR et al. Mott insulators: a large class of materials for leaky integrate-and-fire (LIF) artificial neuron. Journal of Applied Physics, 152124(2018).

[33] Y ZHANG, Z FANG, X YAN. HfO₂-based memristor-CMOS hybrid implementation of artificial neuron model. Applied Physics Letters, 213502(2022).

[34] Y ZHANG, W XUE, Z JI et al. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films. Nanoscale, 7037(2017).