Journal of Inorganic Materials, Volume. 38, Issue 4, 413(2023)

Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations

Yu TIAN1...2, Xiaojian ZHU2,*, Cui SUN2, Xiaoyu YE2, Huiyuan LIU2 and Runwei LI2 |Show fewer author(s)
Author Affiliations
  • 11. School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, China
  • 22. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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    Figures & Tables(7)
    Flow chart of Cu@GaIn/AgNWs-PU/Cu@GaIn device fabrication
    I-V characteristics of the Cu@GaIn/AgNWs-PU/Cu@GaIn device
    Working mechanism of the Cu@GaIn/AgNWs-PU/Cu@GaIn device
    Emulation of the integrate-and-fire behaviors of biological neurons with the Cu@GaIn/AgNWs-PU/Cu@GaIn device
    Influences of the voltage pulse amplitude and interval on the integrate-and-fire behaviors of the memristor based artificial neuron
    Threshold switching voltages of the Cu@GaIn/AgNWs-PU/Cu@GaIn device under different tensile strain conditions
    Integrate-and-fire function test of artificial neuron under tensile strain conditions
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    Yu TIAN, Xiaojian ZHU, Cui SUN, Xiaoyu YE, Huiyuan LIU, Runwei LI. Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations[J]. Journal of Inorganic Materials, 2023, 38(4): 413

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    Paper Information

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    Received: Nov. 28, 2022

    Accepted: --

    Published Online: Oct. 17, 2023

    The Author Email: ZHU Xiaojian (zhuxj@nimte.ac.cn)

    DOI:10.15541/jim20220712

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