Microelectronics, Volume. 53, Issue 2, 272(2023)

Research Progress of New Generation SiGe BiCMOS Process with Ultra-High Speed

MA Yu1... ZHANG Peijian2, XU Xueliang2, CHEN Xian2 and YI Xiaohui2 |Show fewer author(s)
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    MA Yu, ZHANG Peijian, XU Xueliang, CHEN Xian, YI Xiaohui. Research Progress of New Generation SiGe BiCMOS Process with Ultra-High Speed[J]. Microelectronics, 2023, 53(2): 272

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    Received: Jan. 17, 2023

    Accepted: --

    Published Online: Dec. 15, 2023

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    DOI:10.13911/j.cnki.1004-3365.230026

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