[1] [1] ZHAO S E, BONALDO S, WANG P, et al. Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si ［J］. IEEE Trans Nucl Sci, 2019, 66(7): 1599-1605.

[2] [2] ZHAO S E, BONALDO S, WANG P, et al.Total-ionizing-dose effects on InGaAs FinFETs with modified gate-stack ［J］. IEEE Trans Nucl Sci, 2020, 67(1): 253-259.

[3] [3] CHATTERJEE I, ZHANG E X, BHUVA B L, et al. Geometry dependence of total-dose effects in bulk FinFETs ［J］. IEEE Trans Nucl Sci, 2014, 61(6): 2951-2958.

[5] [5] KING M P, WU X, ELLER M, et al. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance ［J］. IEEE Trans Nucl Sci, 2017, 64(1): 285-292.

[6] [6] WANG B, CUI J, GUO Q, et al. The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET ［J］. J Semicond, 2020, 41(12): 11-15.

[7] [7] REN Z, AN X, LI G, et al. TID response of bulk Si PMOS FinFETs: bias, fin width, and orientation dependence ［J］. IEEE Trans Nucl Sci, 2020, 67(7): 1320-1325.

[8] [8] ASTM F996-11, standard test method for separating an ionizing radiation-induced MOSFET threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current-voltage characteristics ［S］. ASTM International, 2011.

[10] [10] MCWHORTER P J, WINOKUR P S. Simpletechnique for separating the effects of interface traps and trapped-oxide charge in metal - oxide -semiconductor transistors ［J］. Appl Phys Lett, 1986, 48(2): 133-135.

[11] [11] LI B, HUANG Y, WU J, et al. Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment ［J］. Microelec Reliab, 2018, 88-90: 969-973.

[12] [12] DIXIT S K, ZHOU X J, SCHRIMPF R D, et al. Radiation induced charge trapping in ultrathin HfO2-based MOSFETs ［J］. IEEE Trans Nucl Sci, 2007, 54(6): 1883-1890.

[13] [13] CHATZIKYRIAKOU E, POTTER K, REDMAN- WHITE W, et al. Three-dimensional finite elements method simulation of total ionizing dose in 22 nm bulk nFinFETs ［J］. Nucl Instrum Methods Phys Res, Sect B, 2017, 393: 39-43.

[14] [14] GAILLARDIN M, GOIFFON V, GIRARD S, et al. Enhanced radiation-induced narrow channel effects in commercial 0.18 μm bulk technology ［J］. IEEE Trans Nucl Sci, 2011, 58(6): 2807-2815.

[15] [15] PANTELAKIS D C, HEMMENWAY D F, VONNO N W V, et al. Freeze-out characterization of radiation hardened N+ polysilicon gate CMOS transistors ［J］. IEEE Trans Nucl Sci, 1991, 38(6): 1289-1296.

[16] [16] PEASE R L, CLARK S D, COLE P L, et al. Total dose response of transconductance in MOSFETs at low temperature ［J］. IEEE Trans Nucl Sci, 1994, 41(3): 549-554.

[17] [17] YANG L, ZHANG Q, HUANG Y, et al. Total ionizing dose response and annealing behavior of bulk nFinFETs with on-state bias irradiation ［J］. IEEE Trans Nucl Sci, 2018, 65(8): 1503-1510.

[18] [18] LI B, HUANG Y B, YANG L, et al. Process variation dependence of total ionizing dose effects in bulk nFinFETs ［J］. Microelec Reliab, 2018, 88-90: 946-951.