Researching | Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels

Acta Photonica Sinica, Volume. 51, Issue 11, 1104002(2022)

Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels

Qian WANG... Jiangtao XU*, Zhiyuan GAO and Quanmin CHEN |Show fewer author(s)

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Tianjin Key Laboratory of Imaging and Sensing Microelectronics，School of Microelectronics，Tianjin University，Tianjin 300072，China

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References(17)

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[7] B MHEEN, Y SONG, A J P THEUWISSEN. Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current. IEEE Electron Device Letters, 29, 347-349(2008).

[8] T WATANABE, J H PARK, S AOYAMA et al. Effects of negative-bias operation and optical stress on dark current in CMOS image sensors. IEEE Transactions on Electron Devices, 57, 1512-1518(2010).

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Qian WANG, Jiangtao XU, Zhiyuan GAO, Quanmin CHEN. Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels[J]. Acta Photonica Sinica, 2022, 51(11): 1104002

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Paper Information

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Received: Feb. 15, 2022

Accepted: Apr. 12, 2022

Published Online: Dec. 13, 2022

The Author Email: XU Jiangtao (xujiangtao@tju.edu.cn)

DOI:10.3788/gzxb20225111.1104002

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