Researching | Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels

Acta Photonica Sinica, Volume. 51, Issue 11, 1104002(2022)

Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels

Qian WANG, Jiangtao XU^*, Zhiyuan GAO, and Quanmin CHEN

Author Affiliations

Tianjin Key Laboratory of Imaging and Sensing Microelectronics，School of Microelectronics，Tianjin University，Tianjin 300072，China

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References(17)

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[9] ZHANG W, WEI Z, WANG Y et al. Investigation of CMOS image sensor dark current reduction by optimizing interface defect[C], 1-3(2017).

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Qian WANG, Jiangtao XU, Zhiyuan GAO, Quanmin CHEN. Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels[J]. Acta Photonica Sinica, 2022, 51(11): 1104002

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Paper Information

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Received: Feb. 15, 2022

Accepted: Apr. 12, 2022

Published Online: Dec. 13, 2022

The Author Email: Jiangtao XU (xujiangtao@tju.edu.cn)

DOI:10.3788/gzxb20225111.1104002

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