Acta Photonica Sinica, Volume. 51, Issue 11, 1104002(2022)

Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels

Qian WANG... Jiangtao XU*, Zhiyuan GAO and Quanmin CHEN |Show fewer author(s)
Author Affiliations
  • Tianjin Key Laboratory of Imaging and Sensing Microelectronics,School of Microelectronics,Tianjin University,Tianjin 300072,China
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    Figures & Tables(9)
    4T-PPD pixel structure profile of P+ TG and N+ TG
    Potential diagram along the emission current path of P+ TG and N+ TG
    Two-dimensional simulation profiles
    One-dimensional potential diagrams under TG
    Simulation results of FWC and dark charges with two types of doped TG at 0 V
    Simulation results of FWC and dark current with two types of doped TG at various VTG_off
    Simulation results of CTE with P+TG and N+TG
    One-dimensional potential diagram under TG channels with TG on
    • Table 1. The design parameters in this paper

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      Table 1. The design parameters in this paper

      ParameterValueUnit
      Absolute temperature,T300K
      Silicon forbidden bandgap, Eg1.12eV
      Boltzmann constant,K1.38×10-23J/K
      Doping concentration in channel region of substrate,Na1.5×1017cm-3
      Intrinsic carrier concentration,ni1.5×1010cm-3
      Thickness of oxide layer,d6nm
      Width of TG,W1μm
      Length of TG,L0.6μm
      Dielectric constant,εo8.85×10-12F/m
      Relative dielectric constant of the silicon,εs11.9-
      Relative dielectric constant of the oxide layer,εr3.9-
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    Qian WANG, Jiangtao XU, Zhiyuan GAO, Quanmin CHEN. Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels[J]. Acta Photonica Sinica, 2022, 51(11): 1104002

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    Paper Information

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    Received: Feb. 15, 2022

    Accepted: Apr. 12, 2022

    Published Online: Dec. 13, 2022

    The Author Email: XU Jiangtao (xujiangtao@tju.edu.cn)

    DOI:10.3788/gzxb20225111.1104002

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