Acta Photonica Sinica, Volume. 51, Issue 11, 1104002(2022)
Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels
Fig. 2. Potential diagram along the emission current path of P+ TG and N+ TG
Fig. 5. Simulation results of FWC and dark charges with two types of doped TG at 0 V
Fig. 6. Simulation results of FWC and dark current with two types of doped TG at various VTG_off
Fig. 8. One-dimensional potential diagram under TG channels with TG on
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Qian WANG, Jiangtao XU, Zhiyuan GAO, Quanmin CHEN. Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels[J]. Acta Photonica Sinica, 2022, 51(11): 1104002
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Received: Feb. 15, 2022
Accepted: Apr. 12, 2022
Published Online: Dec. 13, 2022
The Author Email: XU Jiangtao (xujiangtao@tju.edu.cn)