[1] [1] T Goto, J R Vargas, T Hirai. Preparation of iridium clusters by MOCVD and their electrochemical properties [J]. Materials Science and Engneering: A, 1996, 217-218: 223-226.

[2] [2] T Gerfin, W J Halg, F Atamny, et al.. Growth of iridium films by metal organic chemical vapor deposition [J]. Thin Solid Films, 1994, 241(1): 352-355.

[3] [3] R Vargas, T Goto, W Zhang, et al.. Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition [J]. Appl Phy Lett, 1994, 65(9): 1094-1096.

[4] [4] Cai Hongzhong, Hu Changyi, Chen Li, et al.. Iridium film prepared by metal-organic chemical vapor deposition [J]. Chinese Jounal of Rare Metals, 2009, 33(2): 200-204.

[5] [5] T Suntola. Atomic layer epitaxy [J]. Thin Solid Films, 1992, 216(1): 84-89.

[6] [6] H L Goodman, M V Pessa. Atomic layer epitaxy [J]. J Appl Phys, 1986, 60(3): R65-R82.

[7] [7] S M George. Atomic layer deposition: An overview [J]. Chem Rev, 2009, 110(1): 111-131.

[8] [8] T Aaltonen, M Ritala, V Sammelselg, et al.. Atomic layer deposition of iridium thin films [J]. J Elec Soc, 2004, 151(8): G489-G492.

[9] [9] J Hamalainen, E Puukilainen, M Kemell, et al.. Atomic layer deposition of iridium thin films by consecutive oxidation and reduction steps [J]. Chem Mater, 2009, 21(20): 4868-4872.

[10] [10] S T Christensen, J W Elam. Atomic layer deposition of Ir-Pt alloy films [J]. Chem Mater, 2010, 22(8): 2517-2525.

[11] [11] T Weber, T Kasebier, E B Kley, et al.. Broadband iridium wire grid polarizer for UV applications [J]. Opt Lett, 2011, 36(4): 445-447.

[12] [12] T Weber, T kasebier, A Szeghalmi, et al.. Iridium wire grid polarizer fabricated using atomic layer deposition [J]. Nanoscale Research Letters, 2011, 6(1): 1-4.

[13] [13] Yan Xin, Zhang Qiuyu. Synthesis, characterization and thermal decomposition mechanism of tris-acetylacetonate iridium complex [J]. Chinese Journal of Rare Metals, 2010, 34(4): 585-589.

[14] [14] Pan Shuiyan. Preparation of Ir Coatings by MOCVD [D]. Changsha: National University of Defense Technology, 2004. 34-50.

[15] [15] H Kim, H B R Lee, W J Maeng. Applications of atomic layer deposition to nanofabrication and emerging nanodevices [J]. Thin Solid Films, 2009, 517(8): 2563-2580.

[16] [16] N B Morozova, P P Semyannikov, S V Sysoev, et al.. Saturated vapor pressure of iridium (III) acetylacetonate [J]. Journal of Thermal Analysis and Calorimetry, 2000, 60(2): 489-495.

[17] [17] Y M Sun, J P Endle, K Smith, et al.. Iridium film growth with iridium tris-acetylacetonate: Oxygen and substrate effects [J]. Thin Solid Films, 1999, 346(1): 100-107.

[18] [18] Li Wei, Jin Chengyu. Analytical approach and methods for ellipsometry on thin film [J]. Chinese J Spectroscopy Laboratory, 2010, 27(1): 66-76.

[19] [19] Tang Jinfa, Gu Peifu, Liu Xu, et al.. Modern Optical Thin Film Technology [M]. Hangzhou: Zhejiang University Press, 2006. 288-344.

[20] [20] C D Wagner, W M Riggs, L E Davis, et al.. Handbook of X-Ray Photoelectron Spectroscopy [M]. Minnesota: Perkin-Elmer Corporation Press, 1979. 150-151.