Acta Optica Sinica, Volume. 34, Issue 10, 1031002(2014)
Properties of Iridium Thin Films Fabricated by Atomic Layer Deposition
Ir(acac)3 and O2 are used as chemical precursors to deposit iridium thin films on Si and quartz substrates by atomic layer deposition(ALD) at the temperature of 340 ℃. Characteristics of the films such as optical properties, microstructure and surface morphological image are investigated by reflectance spectrometer, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscope(SEM) and atomic force microscopy (AFM). The results show that the films have polycrystalline morphology of nanoparticles and smooth surfaces, low impurity content. The thin films exhibits good optical properties in the ultraviolet spectral region, and it can be well used for Ir grating and other optical devices.
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Ye Zhijie, Shen Weidong, Zhang Yueguang, Zhang Xing, Yuan Wenjia, Li Yanghui, Liu Xu. Properties of Iridium Thin Films Fabricated by Atomic Layer Deposition[J]. Acta Optica Sinica, 2014, 34(10): 1031002
Category: Thin Films
Received: May. 12, 2014
Accepted: --
Published Online: Sep. 9, 2014
The Author Email: Zhijie Ye (yezhijie006@163.com)