Researching | The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors

Journal of Semiconductors, Volume. 44, Issue 4, 040401(2023)

The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors

Dahai Wei^*

Author Affiliations

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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References(11)

[1] C Gong, L Li, Z Li et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature, 546, 265(2017).

[2] B Huang, G Clark, E Navarro-Moratalla et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature, 546, 270(2017).

[3] S Bertolazzi, J Brivio, A Kis. Stretching and breaking of ultrathin MoS2. ACS Nano, 5, 9703(2011).

[4] R Peng, H C Xu, S Y Tan et al. Tuning the band structure and superconductivity in single-layer FeSe by interface engineering. Nat Commun, 5, 5044(2014).

[5] P Zhang, X L Peng, T Qian et al. Observation of high-TC superconductivity in rectangular FeSe/SrTiO3(110) monolayers. Phys Rev B, 94, 104510(2016).

[6] G Cocco, E Cadelano, L Colombo. Gap opening in graphene by shear strain. Phys Rev B, 81, 241412(2010).

[7] X J Dong, J Y You, B Gu et al. Strain-induced room-temperature ferromagnetic semiconductors with large anomalous Hall conductivity in two-dimensional Cr2Ge2Se6. Phys Rev Appl, 12, 014020(2019).

[8] X J Dong, J Y You, Z Zhang et al. Great enhancement of Curie temperature and magnetic anisotropy in two-dimensional van der Waals semiconductor heterostructures. Phys Rev B, 102, 144443(2020).

[9] Z Zhang, J Y You, X Y Ma et al. Kagome quantum anomalous Hall effect with high Chern number and large band gap. Phys Rev B, 103, 014410(2021).

[10] Z Zhang, J Y You, B Gu et al. Emergent magnetic states due to stacking and strain in the van der Waals magnetic trilayer CrI3. Phys Rev B, 104, 174433(2021).

[11] A O’Neill, S Rahman, Z Zhang et al. Enhanced room temperature ferromagnetism in highly strained 2D semiconductor Cr2Ge2Te6. ACS Nano, 17, 735(2023).

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Dahai Wei. The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors[J]. Journal of Semiconductors, 2023, 44(4): 040401

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Paper Information

Category: Articles

Received: Jan. 30, 2023

Accepted: --

Published Online: Apr. 24, 2023

The Author Email: Wei Dahai (dhwei@semi.ac.cn)

DOI:10.1088/1674-4926/44/4/040401

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