Journal of Semiconductors, Volume. 44, Issue 4, 040401(2023)

The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors

Dahai Wei*
Author Affiliations
  • State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    Figures & Tables(1)
    (Color online) Temperature-dependent magnetic force microscopy (MFM) signal of curved wrinkles in the 2D Cr2Ge2Te6 with (a) 1.3% strain and (b) 2.3% stain in experiment. Numerically calculated Tc and the magnetic anisotropy energy (MAE) as a function of strain for (c) monolayer and (d) bilayer Cr2Ge2Te6, respectively. Adapted from Ref. [11].
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    Dahai Wei. The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors[J]. Journal of Semiconductors, 2023, 44(4): 040401

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    Paper Information

    Category: Articles

    Received: Jan. 30, 2023

    Accepted: --

    Published Online: Apr. 24, 2023

    The Author Email: Wei Dahai (dhwei@semi.ac.cn)

    DOI:10.1088/1674-4926/44/4/040401

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