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[2] En-yuan XIE, Rui BIAN, Xiang-yu HE. Over 10 Gbps VLC for long-distance applications using a GaN-based series-biased micro-LED array. IEEE Photonics Technology Letters, 32, 499-502(2020).

[3] Sheng-jun ZHOU, Xing-tong LIU, Han YAN. Highly efficient GaN-based high-power flip-chip light-emitting diodes. Optics Express, 27(2019).

[4] Sheng-jun ZHOU, Xing-tong LIU, Yi-lin GAO. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts. Optics Express, 25, 26615-26627(2017).

[5] Der-min KOU, Shui-jinn WANG, Kai-ming UANG. Enhanced performance of vertical GaN-based LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells. IEEE Photonics Technology Letters, 22, 338-340(2010).

[6] LEE Wei-chi, Shui-jinn WANG, Kai-ming UANG. Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching. IEEE Photonics Technology Letters, 22, 1318-1320(2010).

[7] Yuan LI, Wen-liang WANG, Lie-gen HUANG. High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates. Journal of Materials Chemistry C, 6, 11255-11260(2018).

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[9] Ray-hua HORNG, Shao-hua HUANG, Chuang-yu HSICH. Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors. IEEE Journal of Quantum Electronics, 44, 1116-1123(2008).

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[12] Shiue-lung CHEN, Shui-jinn WANG, Kai-ming UANG. Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques. IEEE Photonics Technology Letters, 19, 351-353(2007).

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[15] Liang-cheng WANG, En-qing GUO, Zhi-qiang LIU. High-performance nitride vertical light-emitting diodes based on Cu electroplating technical route. IEEE Transactions on Electron Devices, 63, 892-902(2016).

[16] Sheng-jun ZHOU, Hao-hao XU, Bin TANG. High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate. Optics Express, 27(2019).

[17] Jin-zhao WU, Xiao-ling SHI, Hao LONG. Large rabi splitting in InGaN quantum wells microcavity at room temperature. Materials Research Express, 6, 076204(2019).

[18] Ya-jun HUANG, Liang-chen WANG, Zhi-qiang LIU. Current distribution study of vertical structure GaN-based light-emitting diodes. Semiconductor Technology, 34, 861-863(2009).

[19] Yi LIU, Guan-cai ZHAO, Pei-xian LI. Simulation and optimization of current distribution in GaN-based LEDs. Electronic Sci&Tech, 23, 43-46(2010).

[20] Li LIU, Xiao-long HU, Hong WANG. N-type electrode patterns design and device fabrication of GaN-based vertical structure LEDs. Chinese Journal of Luminescence, 37, 338-345(2016).