Journal of Inorganic Materials, Volume. 36, Issue 7, 779(2021)

Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films

Hui WANG1...2, Shujuan ZHANG1,3, Tingwei CHEN1, Chuanlin ZHANG1, Haosu LUO2 and Renkui ZHENG1,* |Show fewer author(s)
Author Affiliations
  • 11. Jiangxi Engineering Laboratory for Advanced Functional Thin Films, School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
  • 22. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • 33. School of Materials, Mechanic, and Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, China
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    References(37)

    [10] S TAN, S YIN, G OUYANG. Size effect on the interface modulation of interlayer and auger recombination rates in MoS2/WSe2 van der Waals heterostructures. Journal of Inorganic Materials, 35, 682-688(2020).

    [16] S ZHANG, J ZHOU, Q WANG et al. Penta-graphene: a new carbon allotrope. Proceedings of the National Academy of Sciences of the United States of America, 112, 2372-2377(2015).

    [19] J LIANG Q, X WANG Q, Q ZHANG et al. High-performance, room temperature, ultra-broadband photodetectors based on air-stable PdSe2. Advanced Materials, 31, 1807609(2019).

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    Hui WANG, Shujuan ZHANG, Tingwei CHEN, Chuanlin ZHANG, Haosu LUO, Renkui ZHENG. Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films[J]. Journal of Inorganic Materials, 2021, 36(7): 779

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    Paper Information

    Category: RESEARCH LETTER

    Received: Sep. 15, 2020

    Accepted: --

    Published Online: Nov. 25, 2021

    The Author Email: ZHENG Renkui (zrk@ustc.edu)

    DOI:10.15541/jim20200540

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