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Journal of Inorganic Materials, Volume. 36, Issue 7, 779(2021)

Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films

Hui WANG1...2, Shujuan ZHANG1,3, Tingwei CHEN1, Chuanlin ZHANG1, Haosu LUO2 and Renkui ZHENG1,* |Show fewer author(s)
Author Affiliations
  • 11. Jiangxi Engineering Laboratory for Advanced Functional Thin Films, School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
  • 22. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • 33. School of Materials, Mechanic, and Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, China
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    Side and top view of the crystal structure of PdSe2 thin films (a), schematic illustration for the growth of PdSe2 films on SiO2/Si substrates by post-selenization of a Pd layer in an evacuated quartz ampule (b), and structure diagram of the PdSe2/SiO2/Si structure (c)
    1. Side and top view of the crystal structure of PdSe2 thin films (a), schematic illustration for the growth of PdSe2 films on SiO2/Si substrates by post-selenization of a Pd layer in an evacuated quartz ampule (b), and structure diagram of the PdSe2/SiO2/Si structure (c)

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    Photograph of an as-synthesized 5 mm×5 mm PdSe2 thin film (a), and top-view micrographs of the films selenized at 200 (b), 250 (c), 300 (d), 450 (e), and 600 ℃ (f), respectively
    2. Photograph of an as-synthesized 5 mm×5 mm PdSe2 thin film (a), and top-view micrographs of the films selenized at 200 (b), 250 (c), 300 (d), 450 (e), and 600 ℃ (f), respectively

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    Raman spectra (a), FWHM of the Ag3 peaks (b) and Se/Pd atomic ratios (c) of the PdSe2 thin films selenized at different temperatures, cross-sectional HRTEM images for a film selenized at 300 ℃(d-e)
    3. Raman spectra (a), FWHM of the Ag3 peaks (b) and Se/Pd atomic ratios (c) of the PdSe2 thin films selenized at different temperatures, cross-sectional HRTEM images for a film selenized at 300 ℃(d-e)

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    Hall resistivity (a), carrier concentration (b), carrier mobility (c), and MR (d) of PdSe2 thin films fabricated at different selenization temperaturesInset in (b) is conductivities of different PdSe2 thin films. Dashed lines in (b, c) represent the carrier density and mobility of the Pd layer
    4. Hall resistivity (a), carrier concentration (b), carrier mobility (c), and MR (d) of PdSe2 thin films fabricated at different selenization temperaturesInset in (b) is conductivities of different PdSe2 thin films. Dashed lines in (b, c) represent the carrier density and mobility of the Pd layer

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    • Table 1.

      Comparison of the hole carrier mobility of our p-type PdSe2 with other thin films

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      Table 1.

      Comparison of the hole carrier mobility of our p-type PdSe2 with other thin films

      MethodMobility/(cm2·V-1·s-1)Ref.
      Exfoliation20.0[13]
      Exfoliation14.0[18]
      Exfoliation0.9[35]
      Exfoliation1.8[36]
      Vacuum selenization48.5This work
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    Hui WANG, Shujuan ZHANG, Tingwei CHEN, Chuanlin ZHANG, Haosu LUO, Renkui ZHENG. Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films[J]. Journal of Inorganic Materials, 2021, 36(7): 779

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    Paper Information

    Category: RESEARCH LETTER

    Received: Sep. 15, 2020

    Accepted: --

    Published Online: Nov. 25, 2021

    The Author Email: ZHENG Renkui (zrk@ustc.edu)

    DOI:10.15541/jim20200540

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology