Researching | Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Journal of Semiconductors, Volume. 45, Issue 8, 082501(2024)

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Siyi Huang^1,2,3, Masao Ikeda^2,3、*, Feng Zhang^2,3, Minglong Zhang^1,2,3, Jianjun Zhu^2,3, Shuming Zhang^1,2,3, and Jianping Liu^1,2,3、**

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China

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Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang, Jianping Liu. Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing[J]. Journal of Semiconductors, 2024, 45(8): 082501

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Paper Information

Category: Articles

Received: Jan. 11, 2024

Accepted: --

Published Online: Aug. 27, 2024

The Author Email: Ikeda Masao (mikeda2013@sinano.ac.cn), Liu Jianping (jpliu2010@sinano.ac.cn)

DOI:10.1088/1674-4926/24010017

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology