Fig. 1. (Color online) Calibration curves of [Mg] for two series of p-GaN samples.

Fig. 2. (Color online) Relationships between p, ρ, and μ for samples A (circles) and B (squares) under different annealing conditions, the solid lines are trendlines.

Fig. 3. (Color online) Residual [H] plot against [Mg] for selected p-GaN samples after annealing.

Fig. 4. (Color online) Dependence of the (a) p, (b) ρ, and (c) μ for each p-GaN sample on [Mg] by RT Hall measurement. Blue solid lines are guides for eyes. Black symbols are taken from literatures^{[15, 23−26]}.

Fig. 5. (Color online) Depth profile of Mg, C, O, and Si of a typical p-GaN sample grown at 850 °C after annealing, measured by SIMS.

Fig. 6. (Color online) Dependence of p for each p-GaN sample on [Mg] by RT Hall measurement. Red solid curve is the theoretical curve obtained from this experiment. Black dotted line assumes N_D = 1 × 10¹⁷ cm⁻³, NA−=p+ND, and the same E_A with the red curve. Black broken line is obtained assuming the same E_A with the red curve, N_A = [Mg] − [H] and using residual [H] taken from Fig. 3. Blue dots are measured data taken from Fig. 4(a).