Acta Photonica Sinica, Volume. 53, Issue 7, 0753301(2024)

Polarization Photodetector Based on van der Waals Materials and Performance Enhancement Strategies (Invited)

Jing WANG1... Hanxue JIAO1,*, Yan CHEN1,2,**, Shuaiqin WU1,2, Xudong WANG1, Shukui ZHANG1, Junhao CHU1,2, and Jianlu WANG12 |Show fewer author(s)
Author Affiliations
  • 1Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Institute of Optoelectronics, Fudan University, Shanghai Key Laboratory for Intelligent Optoelectronics and Sensing, Shanghai 200433, China
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    Figures & Tables(10)
    Development of polarization detectors[7-10]
    Typical lattice structure of anisotropic two-dimensional materials
    Magnetic field intensity distribution and field component diagram of surface plasmon supported by metal dielectric interface
    Enhanced structure of surface plasmon for linearly polarized light detection
    Enhanced structure of surface plasmon for circular polarized light detection
    Polarization-voltage hysteresis of a typical ferroelectric material
    Polarization photodetectors based on 2D materials under the control of ferroelectric field
    Brillouin zone construction of corner bilayer graphene[95]
    Polarization photodetectors based on twisted 2D materials
    • Table 1. Comparison of detection performance of different enhanced polarization detectors

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      Table 1. Comparison of detection performance of different enhanced polarization detectors

      MethodMaterialResponse wavelength/μmResponsivityDetectivity/(cm·Hz1/2·W-1Response timeNoise equivalent power/(nW·Hz-1/2Polarzation ratioRef.
      Surface PlasmonGraphene436.3 mA/W 27 V/W5×106100 μs0.124N.A.8
      4392 V/WN.A.886/902 ns0.67N.A.59
      3~200.6 A/WN.A.7 ps0.02660
      12.216 mA/WN.A.35 ns1.32561
      6~822 mA/WN.A.17 ns0.0821.562
      Te8410 V/W1.7×107176/71 μs0.042.5×10455
      Gr/Au3.6~4.115.6 V/WN.A.667 ns0.64∞/-∞67
      Bp1.5512 mA/WN.A.N.A.N.A.8.763
      PdSe25.33.6 V/W2×10576 μs9.73765
      Ferroelectric FieldGeSe/MoS20.52~1.55729.3 mA/W4.7×101214 μsN.A.6.2584
      Bp1.451.06 A/W1.27×1011361 μsN.A.28810
      [CH3(CH23NH32(CH3NH3)Pb2Br70.405N.A.1.1×10920 μsN.A.2.081
      SbBr60.405N.A.1.1×10945/68 μsN.A.6.9103
      BA2CsPb2Br70.40539.5 mA/W1.12×1012300 μsN.A.1.5104

      PdSe2/FA1-x

      CsxPbI3

      0.2~1.55313 mA/W2.72×10133.5/4 μsN.A.6.04105
      Twisted Angle MaterialsTwisted Double Bilayer Graphene7.73.7 V/WN.A.N.A.N.A.≈2.0100
      2~1004 A/WN.A.N.A.6.6×10-5N.A.106
      SiP2/MoS21.064N.A.N.A.N.A.N.A.0.33102
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    Jing WANG, Hanxue JIAO, Yan CHEN, Shuaiqin WU, Xudong WANG, Shukui ZHANG, Junhao CHU, Jianlu WANG. Polarization Photodetector Based on van der Waals Materials and Performance Enhancement Strategies (Invited)[J]. Acta Photonica Sinica, 2024, 53(7): 0753301

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    Paper Information

    Category: Special Issue for Ultrafast Optics

    Received: Apr. 1, 2024

    Accepted: May. 17, 2024

    Published Online: Aug. 12, 2024

    The Author Email: JIAO Hanxue (jiaohanxue@fudan.edu.cn), CHEN Yan (yanchen_@fudan.edu.cn)

    DOI:10.3788/gzxb20245307.0753301

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