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Advanced Photonics Nexus, Volume. 2, Issue 5, 056001(2023)

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures On the Cover

Wayesh Qarony1、†, Ahmed S. Mayet1, Ekaterina Ponizovskaya Devine2, Soroush Ghandiparsi1, Cesar Bartolo-Perez1, Ahasan Ahamed1, Amita Rawat1, Hasina H. Mamtaz1, Toshishige Yamada2,3, Shih-Yuan Wang2, and M. Saif Islam1、*
Author Affiliations
  • 1University of California, Davis, Department of Electrical and Computer Engineering, Davis, California, United States
  • 2W&WSens Devices, Inc., Los Altos, California, United States
  • 3University of California, Baskin School of Engineering, Department of Electrical and Computer Engineering, Santa Cruz, California, United States
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    Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina H. Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam. Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures[J]. Advanced Photonics Nexus, 2023, 2(5): 056001

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    Paper Information

    Category: Research Articles

    Received: May. 19, 2023

    Accepted: Jul. 3, 2023

    Published Online: Jul. 26, 2023

    The Author Email: Islam M. Saif (sislam@ucdavis.edu)

    DOI:10.1117/1.APN.2.5.056001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology