Advanced Photonics Nexus, Volume. 2, Issue 5, 056001(2023)
Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures On the Cover
Fig. 1. Design and fabrication of highly absorbing thin-film Si photon-trapping photodetector. (a) Schematic of the photon-trapping silicon MSM photodetector. The photon-trapping cylindrical hole arrays allow lateral propagation by bending the incident light, resulting in an enhanced photon absorption in Si. (b) Optical microscopy images of the photon-trapping photodetectors fabricated on a
Fig. 2. Experimental demonstration of absorption enhancement in Si that exceeds the intrinsic absorption limit of GaAs. (a) Comparison of the enhanced absorption coefficients (
Fig. 3. Theoretical demonstration of enhanced absorption characteristics in ultrathin Si film integrated with photon-trapping structures. (a) Comparison of simulated absorption of photon-trapping [
Fig. 4. Reduced group velocity in photon-trapping Si (slow light) and enhanced optical coupling to lateral modes contribute to enhanced photon absorption. Calculated band structure of Si film with (a) small holes (
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Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina H. Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam. Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures[J]. Advanced Photonics Nexus, 2023, 2(5): 056001
Category: Research Articles
Received: May. 19, 2023
Accepted: Jul. 3, 2023
Published Online: Jul. 26, 2023
The Author Email: Islam M. Saif (sislam@ucdavis.edu)