Infrared and Laser Engineering, Volume. 45, Issue 2, 220003(2016)

Study on removal characteristic of silicon carbide surface in precision mechanical polishing

Li Zhuolin1、* and W.B. Lee2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less

    Precision mechanical polishing was one of the primary techniques for the fabrication of optical components with both high-precision and high-quality surfaces. However, few studies have been reported on the removal rate characteristics of silicon carbides(SiC) in high finish quality polishing processes. SiC was an important ceramic material for many critical industrial and aerospace applications. A theoretical investigation and a series of polishing experiments in computer controlled precision polishing process were presented. And a better understanding of removal mechanisms of SiC surfaces was also proposed for optimizing surface quality. Head speed, tool pressure, tool offset and polishing angle were selected to analyze the surface removal tendency. The Taguchi method was used as an efficient method to optimize the polishing conditions and reduce excessive experimental requiring. Moreover, the results imply the polishing parameters combinations required to achieve the desired surface finish and better application of removal characteristic.

    Tools

    Get Citation

    Copy Citation Text

    Li Zhuolin, W.B. Lee. Study on removal characteristic of silicon carbide surface in precision mechanical polishing[J]. Infrared and Laser Engineering, 2016, 45(2): 220003

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: 光电器件与微系统

    Received: Jun. 5, 2015

    Accepted: Jul. 15, 2015

    Published Online: Apr. 5, 2016

    The Author Email: Zhuolin Li (zhuolinli666@163.com)

    DOI:10.3788/irla201645.0220003

    Topics