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Photonics Research, Volume. 10, Issue 1, 111(2022)

Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang1、†, Xinjia Qiu1、†, Zesheng Lv1, Zhiyuan Song1, and Hao Jiang1,2,3、*
Author Affiliations
  • 1School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
  • 2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
  • 3Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou 510275, China
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    Kai Wang, Xinjia Qiu, Zesheng Lv, Zhiyuan Song, Hao Jiang, "Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect," Photonics Res. 10, 111 (2022)

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    Paper Information

    Category: Optical Devices

    Received: Sep. 28, 2021

    Accepted: Nov. 4, 2021

    Published Online: Dec. 13, 2021

    The Author Email: Hao Jiang (stsjiang@mail.sysu.edu.cn)

    DOI:10.1364/PRJ.444444

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology