Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang; Xinjia Qiu; Zesheng Lv; Zhiyuan Song; Hao Jiang

doi:10.1364/PRJ.444444

Photonics Research, Volume. 10, Issue 1, 111(2022)

Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang^1、†, Xinjia Qiu^1、†, Zesheng Lv¹, Zhiyuan Song¹, and Hao Jiang^1,2,3、*

Author Affiliations

¹School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

²State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

³Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou 510275, China

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Kai Wang, Xinjia Qiu, Zesheng Lv, Zhiyuan Song, Hao Jiang, "Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect," Photonics Res. 10, 111 (2022)

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Paper Information

Category: Optical Devices

Received: Sep. 28, 2021

Accepted: Nov. 4, 2021

Published Online: Dec. 13, 2021

The Author Email: Hao Jiang (stsjiang@mail.sysu.edu.cn)

DOI:10.1364/PRJ.444444

Topics

laser devices and laser physics

Lasers and Laser Optics

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laser manufacturing

Instrumentation, Measurement and Metrology