[1] I DANIELE, A STEFANO. Emerging neuromorphic devices. Nanotechnology, 31, 9(2020).

[2] Jiadi ZHU, Teng ZHANG, Yuchao YANG et al. A comprehensive review on emerging artificial neuromorphic devices. Applied Physics Reviews, 7, 7(2020).

[3] Xiaofei DONG, Wenbin WEI. Neotype kuramite optoelectronic memristor for bio-synaptic plasticity simulations. The Journal of Chemical Physics, 158, 184702(2023).

[4] U M S KARIM, N U SAKIB, P ANDREW et al. A bio-inspired visuotactile neuron for multisensory integration. Nature Communications, 14, 5729(2023).

[5] Jianhui ZHAO, Yunfeng RAN, Yifei PEI et al. Memristors based on NdNiO3 nanocrystals film as sensory neurons for neuromorphic computing. Materials Horizons, 10, 4521-4531(2023).

[6] S YUN, C MAHATA, M H KIM et al. Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect. Applied Surface Science, 579, 152164(2022).

[7] Ruqi YANG, Lei YIN, Jianguo LU et al. Optoelectronic artificial synaptic device based on amorphous InAlZnO films for learning simulations. ACS Applied Materials & Interfaces, 14, 46866-46875(2022).

[8] Xumeng ZHANG, Wei WANG, Qi LIU et al. An artificial neuron based on a threshold switching memristor. IEEE Electron Device Letters, 39, 308-311(2017).

[9] C SUNG, H HWANG, I K YOO. Perspective: A review on memristive hardware for neuromorphic computation. Journal of Applied Physics, 124, 151903(2018).

[10] Xuewen WANG, Zhengyan XU, Kaige WANG et al. Research progress of biosensors based on nano-zinc oxide (invited). Acta Photonica Sinica, 51, 1016001(2022).

[11] Zemei PAN, Qiuping ZHANG, Man SONG et al. Facile synthesis of ZnO/TiO2 nanocomposite photocatalysts and study of their photocatalytic performance. Acta Photonica Sinica, 51, 0416001(2022).

[12] Jianhui LI, Chunmei YANG, Caifeng ZHANG et al. Preparation of ZnO/BiOBr composites and photocatalytic degradation of RhB under visible light. Acta Photonica Sinica, 51, 0216001(2022).

[14] D P NORTON, Y W HEO, M P IVILL et al. ZnO: growth, doping & processing. Materials Today, 7, 34-40(2004).

[15] Junjie XING, Shixian QIN. Top-gate transparent organic synaptic transistors based on co-mingled heterojunctions. Electronics, 12, 1596(2023).

[16] W Z T AN. Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors. Journal of the American Chemical Society, 132, 11437-11439(2010).

[17] Bei BAO, Xianyi SHAO, Lu TAN et al. Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors. Chinese Physics B, 24, 24-28(2015).

[19] J W JANG, B ATTARIMASHALKOUBEH, A PRAKASH et al. Scalable neuron circuit using conductive-bridge ram for pattern reconstructions. IEEE Transactions on Electron Devices, 63, 2610-2613(2016).

[20] J WOO, D LEE, Y KOO et al. Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements. Microelectronic Engineering, 182, 42-45(2017).

[21] S R OVSHINSKY, B PASHMAKOV. Innovation providing new multiple functions in phase-change materials to achieve cognitive computing. MRS Online Proceedings Library, 803, HH1. 1(2003).

[22] Rengjian YU, Xianghong ZHANG, Changsong GAO et al. Low-voltage solution-processed artificial optoelectronic hybrid-integrated neuron based on 2D MXene for multi-task spiking neural network. Nano Energy, 99, 107418(2022).

[23] Jiaming LIN, Weixi YE, Xianghong ZHANG et al. A memristor-based leaky integrate-and-fire artificial neuron with tunable performance. IEEE Electron Device Letters, 43, 1231-1234(2022).

[24] Bangyan ZENG, Xianghong ZHANG, Changsong GAO et al. MXene-based memristor for artificial optoelectronic neuron. IEEE Transactions on Electron Devices, 70, 1359-1365(2023).

[25] S SHARMA, A KUMAR, S DUTTA et al. Optically triggered multilevel resistive switching characteristics of Cu/MoS2/AlN/ITO bilayer memory structure. Applied Physics Letters, 117, 192101(2020).

[26] M M REHMAN, G U SIDDIQUI, J Z GUL et al. Resistive switching in all-printed, flexible and hybrid MoS2-PVA nanocomposite based memristive device fabricated by reverse offset. Scientific Reports, 6, 36195(2016).

[27] Xiang HOU, Ruobing PAN, Qiang YU et al. Tubular 3D resistive random access memory based on rolled-up h- BN Tube. Small, 15, 1803876(2019).

[28] F M PUGLISI, L LARCHER, C PAN et al. 2D h-BN based RRAM devices(2016).