Fig. 1. Device structure diagram

Fig. 2. I-V characteristic curve and integral-ignition behavior of artificial photoelectric nerve components based on ZnO/IDTBT

Fig. 3. Integration ignition behavior of artificial optoelectronic neurons based on ZnO/IDTBT under a series of electrical pulse stimuli respectively

Fig. 4. The self-leakage characteristics of artificial neurons without external input， the self-attenuation delay time of artificial neurons returning to high impedance state under low stimulation and the refractory period behavior of artificial neurons

Fig. 5. Working mechanism of artificial photoelectric nerve components based on ZnO/IDTBT

Fig. 6. I-V characteristic curve and integral-ignition behavior of artificial photoelectric neurons based on ZnO/IDTBT when IDTBT concentration is 10 mg/mL and 15 mg/mL

Fig. 7. I-V characteristic curve of artificial photoelectric neurons based on ZnO/IDTBT under illumination conditions

Fig. 8. I-V characteristic curve of artificial photoelectric neurons based on ZnO/IDTBT after 30 days storage