Laser & Optoelectronics Progress, Volume. 60, Issue 9, 0923001(2023)

Goos-Hänchen Shifts of Metal Layer and Quasicrystals with Monolayer Graphene

Zhengyang Li1, Haixia Da1,2、*, and Xiaohong Yan1,2,3
Author Affiliations
  • 1College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, Jiangsu, China
  • 2Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China
  • 3School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China
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    Figures & Tables(4)
    Three-dimensional schematic of the composite structure
    Variation of different parameters of (S4)2 and (S3)2 structures under TM wave and (S4)2 structure under TE wave, respectively. (a) Goos-Hänchen shifts; (b) reflectance; (c) phase of reflection coefficient
    Magnetic field distributions of λ=2 μm in the z direction. (a) Distribution of magnetic field of hybrid structure as a function of the distance; (b) distribution of magnetic field distributions
    Effect of parameters of hybrid structure on Goos-Hänchen shift. (a) Effect of Fermi energy of monolayer graphene; (b) effect of dielectric layer thickness
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    Zhengyang Li, Haixia Da, Xiaohong Yan. Goos-Hänchen Shifts of Metal Layer and Quasicrystals with Monolayer Graphene[J]. Laser & Optoelectronics Progress, 2023, 60(9): 0923001

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    Paper Information

    Category: Optical Devices

    Received: Mar. 16, 2022

    Accepted: Apr. 14, 2022

    Published Online: May. 9, 2023

    The Author Email: Da Haixia (eledah@njupt.edu.cn)

    DOI:10.3788/LOP221017

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