Optics and Precision Engineering, Volume. 31, Issue 22, 3237(2023)

Research on packaging technology of high power blue semiconductor laser bar

Yong ZHOU1... Qi WANG2, Xiang GAO1, Junjian GAO3, Chunyan TAO3 and Mingming HAO3,* |Show fewer author(s)
Author Affiliations
  • 1School of Materials and Energy, Guangdong University of Technology, Guangzhou50006, China
  • 2Dongguan Institute of Opto-electrical Peking University, Dongguan538, China
  • 3School of Information and Engineering, Guangdong University of Technology, Guangzhou510006, China
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    Figures & Tables(8)
    Three packaging structures
    CS package structure
    Vacuum eutectic reflux curve
    SEM of AuSn solder at different bonding temperatures
    Wavelength change curve under different bonding pressure and temperature
    Curve of the relationship between different bonging times and device thermal resistance
    Photoelectric characteristic curve under different bonding pressure
    • Table 1. Spectral and photoelectric parameters under 0.3 N bonding pressure

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      View in Article

      Table 1. Spectral and photoelectric parameters under 0.3 N bonding pressure

      Heat sink

      temperature/℃

      U/VI/AP/Wλ/nm
      303.7106.10448.5
      4.11511.52449.6
      353.7105.35448.9
      4.11510.25450.0
      403.7104.45449.4
      4.1159.35450.4
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    Yong ZHOU, Qi WANG, Xiang GAO, Junjian GAO, Chunyan TAO, Mingming HAO. Research on packaging technology of high power blue semiconductor laser bar[J]. Optics and Precision Engineering, 2023, 31(22): 3237

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    Paper Information

    Category:

    Received: May. 24, 2023

    Accepted: --

    Published Online: Dec. 29, 2023

    The Author Email: HAO Mingming (haomm@gdut.edu.cn)

    DOI:10.37188/OPE.20233122.3237

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