Microelectronics, Volume. 53, Issue 4, 741(2023)
Design and Optimization of 12-kV SiC Planar Inversion MOSFET Using Shallow Trench N+ Injection in the JFET Region
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ZHANG Bingke, LI Xuhan, WANG Rui, DONG Jiajun, CHANG Shucheng, SUN Junmin, BAI Xue, LI Zheyang, JIN Rui. Design and Optimization of 12-kV SiC Planar Inversion MOSFET Using Shallow Trench N+ Injection in the JFET Region[J]. Microelectronics, 2023, 53(4): 741
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Received: May. 1, 2023
Accepted: --
Published Online: Jan. 3, 2024
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