Research progress of 2 μm GaSb-based high power semiconductor laser

Xie Shengwen; Yang Cheng′ao; Huang Shushan; Yuan Ye; Shao Fuhui; Zhang Yi; Shang Jinming; Zhang Yu; Xu Yingqiang; Ni Haiqiao; Niu Zhichuan

doi:10.3788/irla201847.0503003

Infrared and Laser Engineering, Volume. 47, Issue 5, 503003(2018)

Research progress of 2 μm GaSb-based high power semiconductor laser

Xie Shengwen^1,2、*, Yang Cheng′ao^1,2, Huang Shushan^1,2, Yuan Ye^1,2, Shao Fuhui^1,2, Zhang Yi^1,2, Shang Jinming^1,2, Zhang Yu^1,2, Xu Yingqiang^1,2, Ni Haiqiao^1,2, and Niu Zhichuan^1,2

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¹[in Chinese]

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Xie Shengwen, Yang Cheng′ao, Huang Shushan, Yuan Ye, Shao Fuhui, Zhang Yi, Shang Jinming, Zhang Yu, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Research progress of 2 μm GaSb-based high power semiconductor laser[J]. Infrared and Laser Engineering, 2018, 47(5): 503003

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Paper Information

Category: 特约专栏-“红外半导体激光器”

Received: Mar. 7, 2018

Accepted: Apr. 10, 2018

Published Online: Sep. 12, 2018

The Author Email: Shengwen Xie (xsw@semi.ac.cn)

DOI:10.3788/irla201847.0503003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology