Journal of Semiconductors, Volume. 45, Issue 3, 032701(2024)

Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells

Yong Sun1,2、*, Wei Zhang1,2, Shuang Han1,2, Ran An1,2, Xin-Sheng Tang1,2, Xin-Lei Yu1,2, Xiu-Juan Miao1,2、**, Xin-Jun Ma1,2, Xianglian1,2, Pei-Fang Li1,2, Cui-Lan Zhao1,2, Zhao-Hua Ding1,2, and Jing-Lin Xiao1,2
Author Affiliations
  • 1Institute of Condensed Matter Physics, Inner Mongolia Minzu University, Tongliao 028043, China
  • 2College of Physics and Electronic Information, Inner Mongolia Minzu University, Tongliao 028043, China
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    References(37)

    [24] A Jahanshir. Relativistic modification of the exciton’s mass in monolayer TMDCs materials. Journal of Advanced Materials and Processing, 8, 45(2020).

    [32] S Shree, M Semina, C Robert et al. Observation of exciton-phonon coupling in MoSe2 monolayers. Phys Rev B, 98, 035302(2018).

    [37] W Liu. Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley(1999).

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    Yong Sun, Wei Zhang, Shuang Han, Ran An, Xin-Sheng Tang, Xin-Lei Yu, Xiu-Juan Miao, Xin-Jun Ma, Xianglian, Pei-Fang Li, Cui-Lan Zhao, Zhao-Hua Ding, Jing-Lin Xiao. Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells[J]. Journal of Semiconductors, 2024, 45(3): 032701

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    Paper Information

    Category: Articles

    Received: Sep. 2, 2023

    Accepted: --

    Published Online: Apr. 24, 2024

    The Author Email: Sun Yong (YSun), Miao Xiu-Juan (XJMa)

    DOI:10.1088/1674-4926/45/3/032701

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