Journal of Semiconductors, Volume. 45, Issue 3, 032701(2024)
Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells
[24] A Jahanshir. Relativistic modification of the exciton’s mass in monolayer TMDCs materials. Journal of Advanced Materials and Processing, 8, 45(2020).
[32] S Shree, M Semina, C Robert et al. Observation of exciton-phonon coupling in MoSe2 monolayers. Phys Rev B, 98, 035302(2018).
[37] W Liu. Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley(1999).
Get Citation
Copy Citation Text
Yong Sun, Wei Zhang, Shuang Han, Ran An, Xin-Sheng Tang, Xin-Lei Yu, Xiu-Juan Miao, Xin-Jun Ma, Xianglian, Pei-Fang Li, Cui-Lan Zhao, Zhao-Hua Ding, Jing-Lin Xiao. Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells[J]. Journal of Semiconductors, 2024, 45(3): 032701
Category: Articles
Received: Sep. 2, 2023
Accepted: --
Published Online: Apr. 24, 2024
The Author Email: Sun Yong (YSun), Miao Xiu-Juan (XJMa)