Fig. 1. (Color online) (a) Schematic diagram of Al_xGa_1−xAs ground state lattice; (b) schematic diagram of exciton−phonon coupling in Al_xGa_1−xAs crystals; (c) schematic diagram of an exciton subject to parabolic potential.

Fig. 2. (Color online) (a) Schematic diagram of exciton energy band. (b) Relationship between exciton and phonon coupling coefficient and Al concentration.

Fig. 3. (Color online) Exciton energy in Al_xGa_1−xAs crystal: (a) At ω0=1013 Hz, E_b, E₁ and E_g change with Al concentration in Al_xGa_1−xAs crystal; (b) schematic diagram of exciton energies in direct semiconductors and indirect semiconductors.

Fig. 4. (Color online) (a) The influence of quantum dots and Al concentration on exciton ground state binding energy; (b) the dependence of exciton ground state binding energy on quantum dots and Al concentration; (c) the parabolic potential of the electron; (d) the parabolic potential of the hole; (e) schematic diagram of an exciton in an indirect semiconductor.