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Journal of Inorganic Materials, Volume. 38, Issue 3, 343(2023)

Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method

Ruixian YU... Guodong WANG, Shouzhi WANG, Xiaobo HU*, Xiangang XU and Lei ZHANG* |Show fewer author(s)
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  • The State Key Laboratory of Crystal Materials, Shandong University, Institute of Novel Semiconductors, Shenzhen Research Institute of Shandong University, Shandong University, Jinan 250100, China
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    [1] M S SUN, J F LI, J C ZHANG et al. The fabrication of AlN by hydride vapor phase epitaxy. Journal of Semiconductors, 40:, 121803(2019).

    [2] R X YU, G X LIU, G D WANG et al. Ultrawide-bandgap semiconductor AlN crystals: growth and applications. J. Mater. Chem. C, 9:, 1852(2021).

    [3] R X YU, C M CHEN, L ZHANG et al. Influence of different heater structures on the temperature field of AlN crystal growth by resistance heating. Materials, 14:, 7441(2021).

    [4] W ZHENG, F HUANG, R S ZHENG et al. Low-dimensional structure vacuum-ultraviolet-sensitive (λ<200 nm) photodetector with fast-response speed based on high-quality AlN micro/ nanowire. Adv. Mater., 27:, 3921(2015).

    [5] Z L CHEN, Z Q LIU, T B WEI et al. Improved epitaxy of AlN film for deep-ultraviolet light-emitting diodes enabled by graphene. Adv. Mater., 31:, 1807345(2019).

    [6] T J LU, B LIENHARD, K Y JEONG et al. Bright high-purity quantum emitters in aluminum nitride integrated photonics. ACS Photonics, 7:, 2650(2020).

    [7] X H LIU, J C ZHANG, X J SU et al. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method. Appl. Phys. Exp., 9:, 045501(2016).

    [8] Y KATAGIRI, S KISHINO, K OKUURA et al. Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template. J. Cryst. Growth, 311:, 2831(2009).

    [9] C HARTMANN, A DITTMAR, J WOLLWEBER et al. Bulk AlN growth by physical vapor transport. Semicond. Sci. Technol., 29:, 084002(2014).

    [10] D ZHUANG, Z G HERRO, R SCHLEAAER et al. Seeded growth of AlN single crystals by physical vapor transport. J. Cryst. Growth, 287:, 372(2006).

    [11] C GUGUSCHEV, A DITTMAR, E MOUKHINA et al. Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species. J. Cryst. Growth, 360:, 185(2012).

    [12] Y TANIYASU, M KASU, T MAKIMOTO. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2·V-1·s-1). Appl. Phys. Lett., 4672.

    [13] M STRASSBURG, J SENAWIRATNE, N DIETZ. The growth and optical properties of large, high-quality AlN single crystals. J. Appl. Phys., 96:, 5870(2004).

    [14] C HARTMANN, J WOLLWEBER, A DITTMAR et al. Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals. Jpn. J. Appl. Phys., 52:, 08JA06(2013).

    [15] G D WANG, L ZHANG, Y WANG et al. Effect of temperature gradient on AlN crystal growth by physical vapor transport method. Cryst. Growth Des., 19:, 6736(2019).

    [16] P MOTAMEDI, K CADIEN. Structural and optical characterization of low-temperature ALD crystalline AlN. J. Cryst. Growth, 421:, 45(2015).

    [17] C HARTMANN, L MATIWE, J WOLLWEBER et al. Favorable growth conditions for the preparation of bulk AlN single crystals by PVT. CrystEngComm, 22:, 1762(2020).

    [18] R COLLAZO, J XIE, B GADDY et al. On the origin of the 265 nm absorption band in AlN bulk crystals. Appl. Phys. Lett., 100:, 191914(2012).

    [19] B E GADDY, Z BRYAN, I BRYAN et al. The role of the carbon- silicon complex in eliminating deep ultraviolet absorption in AlN. Appl. Phys. Lett., 104:, 202106(2014).

    [20] L ZHAO, K YANG, Y J AI et al. Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing. J. Mater. Sci.: Mater. Electron., 29:, 13766(2018).

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    Ruixian YU, Guodong WANG, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG. Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method[J]. Journal of Inorganic Materials, 2023, 38(3): 343

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    Paper Information

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    Received: Aug. 13, 2022

    Accepted: --

    Published Online: Oct. 16, 2023

    The Author Email: HU Xiaobo (xbhu@sdu.edu.cn), ZHANG Lei (leizhang528@sdu.edu.cn)

    DOI:10.15541/jim20220481

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology