Journal of Inorganic Materials, Volume. 38, Issue 3, 343(2023)

Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method

Ruixian YU... Guodong WANG, Shouzhi WANG, Xiaobo HU*, Xiangang XU and Lei ZHANG* |Show fewer author(s)
Author Affiliations
  • The State Key Laboratory of Crystal Materials, Shandong University, Institute of Novel Semiconductors, Shenzhen Research Institute of Shandong University, Shandong University, Jinan 250100, China
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    Figures & Tables(8)
    Photos of AlN crystal sample(a) Bulk AlN crystal; (b) Polished AlN crystal
    Schematic view of high temperature annealing process(a) High temperature annealing furnace; (b) High temperature annealing process
    EBSD of AlN crystal sample(a) EBSD Kikuchi patterns of AlN crystal without annealing; (b) Band slop obtained from EBSD mapping date; (c) Pole figures of AlN without annealing
    XRD ω-scan rocking curves of AlN (10¯12) diffractions
    Raman spectra of AlN samples without and with annealing at different temperatures
    Optical absorption spectra of the AlN crystals with and without annealing(a) Absorption spectra of the AlN without and with annealing at different temperatures with right enlarged spectra showing an absorption peak at 634 nm; (b) Correlation curves of (αE)2 on E with inset showing the band gap of AlN without and with annealing at different temperatures
    SIMS depth profiles of AlN crystal without (a) and with annealing at 1600 ℃ (b)
    • Table 1.

      Calculated edge dislocations density(ρe) of AlN samples

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      Table 1.

      Calculated edge dislocations density(ρe) of AlN samples

      Sample(10¯12) FWHM/arcsec*Edge dislocations density, ρe/(×107, cm-2)
      Raw104.045.80
      AlN-140079.923.42
      AlN-160078.923.34
      AlN-180097.25.06
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    Ruixian YU, Guodong WANG, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG. Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method[J]. Journal of Inorganic Materials, 2023, 38(3): 343

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    Paper Information

    Category:

    Received: Aug. 13, 2022

    Accepted: --

    Published Online: Oct. 16, 2023

    The Author Email: HU Xiaobo (xbhu@sdu.edu.cn), ZHANG Lei (leizhang528@sdu.edu.cn)

    DOI:10.15541/jim20220481

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