Journal of Semiconductors, Volume. 44, Issue 4, 044101(2023)

A new DRIE cut-off material in SOG MEMS process

Chaowei Si1、*, Yingchun Fu2,3, Guowei Han1, Yongmei Zhao1,4, Jin Ning1,4, Zhenyu Wei1,4, and Fuhua Yang1,4
Author Affiliations
  • 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Beijing Smart-chip Microelectronics Technology Co., Ltd, Beijing 100083, China
  • 3Zhongguancun Xinhaizeyou Technology Co., Ltd, Beijing 100049, China
  • 4Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    References(19)

    [3] B Johnson, K Christ, D Endean et al. Tuning fork MEMS gyroscope for precision northfinding. 2015 DGON Inertial Sensors and Systems Symposium, 1(2015).

    [20] M Cai, C Si, G Han et al. Deep silicon etching of bonded wafer based on ITO mask. J Micronanoelectron Technol, 57, 11(2020).

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    Chaowei Si, Yingchun Fu, Guowei Han, Yongmei Zhao, Jin Ning, Zhenyu Wei, Fuhua Yang. A new DRIE cut-off material in SOG MEMS process[J]. Journal of Semiconductors, 2023, 44(4): 044101

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    Paper Information

    Category: Articles

    Received: Sep. 13, 2022

    Accepted: --

    Published Online: Apr. 24, 2023

    The Author Email: Si Chaowei (schw@semi.ac.cn)

    DOI:10.1088/1674-4926/44/4/044101

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