Researching | Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode

Acta Photonica Sinica, Volume. 51, Issue 2, 0251218(2022)

Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode

Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, and Shaoying KE^*

Author Affiliations

College of Physics and Information Engineering，Minnan Normal University，Zhangzhou，Fujian 363000，China

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References(33)

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Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, Shaoying KE. Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode[J]. Acta Photonica Sinica, 2022, 51(2): 0251218

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Paper Information

Category: Special Issue for Ultrafast Optics

Received: Aug. 17, 2021

Accepted: Oct. 8, 2021

Published Online: May. 19, 2022

The Author Email: KE Shaoying (syke@mnnu.edu.cn)

DOI:10.3788/gzxb20225102.0251218

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology