Acta Photonica Sinica, Volume. 51, Issue 2, 0251218(2022)
Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode
Figures & Tables(8)
Fig. 4. Carrier concentration and charge concentration as a function of da
Fig. 6. Hole tunneling rate at bonded interface，impact ionization rate，and electrical field as a function of da
Fig. 7. Gain，3dB bandwidth，and carrier velocity as a function of da
Table 1. Material parameters of InGaAs/Si APD
View tableView in ArticleTable 1. Material parameters of InGaAs/Si APD
Parameters of electrons and holes i-InGaAs a-Si c-Si Thickness/nm 800 0.5~1.8 1 000 Permittivity 13.9 11.9 11.8 Electron affinity/eV 4.5 4.17 4.17 Electron，hole lifetime/s 1.00×10-8/1.00×10-8 1.00×10-9/1.00×10-9 1.00×10-7/1.00×10-7 Band gap/eV 0.75 1.72 1.08 Effective conduction band density/cm-3 1.52×1017 2.50×1020 2.80×1019 Effective valence band density/cm-3 8.12×1018 2.50×1020 1.04×1019 Electron，hole mobility/（cm2·V-1·s-1） 14 200/400 20/1.5 1 350/495 an1，an2 2.27×106/2.27×106 7.03×105/7.03×105 7.03×105/7.03×105 ap1， ap2 3.95×106/3.95×106 6.71×105/1.58×106 6.71×105/1.58×106 bn1，bn2 1.13×106/1.13×106 1.23×106/1.23×106 1.23×106/1.23×106 bp1， bp2 1.45×106/1.45×106 1.69×106/2.04×106 1.69×106/2.04×106 betan/betap 1/1 1/1 1/1 Egran -1 4×105 4×105 Band tail density of states/（cm-3·eV-1） 2.00×1021 Characteristic energy（eV）for donors，acceptors 0.06/0.03 Capture cross-section for donor states，electron and hole /cm2 1.00×1015/1.00×1017 Capture cross-section for acceptor states，electron and hole/cm2 1.00×1017/1.00×1015 Gaussian density of states /cm-3 1.00×1018 Gaussian peak energy（eV）donors，acceptors 1.22/0.7 Standard deviation /eV 0.23 Capture cross section for donor states，electron and hole/cm2 1.00×1014/1.00×1015 Capture cross-section for acceptor states，electron and hole/cm2 1.00×1015/1.00×1014
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Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, Shaoying KE. Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode[J]. Acta Photonica Sinica, 2022, 51(2): 0251218
Paper Information
Category: Special Issue for Ultrafast Optics
Received: Aug. 17, 2021
Accepted: Oct. 8, 2021
Published Online: May. 19, 2022
The Author Email: KE Shaoying (syke@mnnu.edu.cn)
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