Semiconductor Optoelectronics, Volume. 41, Issue 2, 169(2020)

Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor

QU Yang1...2, WANG Xinyang1,2,*, ZHOU Quan3 and CHANG Yuchun4 |Show fewer author(s)
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  • 1[in Chinese]
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    References(8)

    [2] [2] Quantum Imaging. inc. Anti-blooming[DB/OL]. 2014-04-15. https://quantum imaging.com/anti-blooming.

    [3] [3] Nakamura Junichi. Image Sensors and Signal Processing for Digital Still Cameras[M]. America: Taylor & Francis, 2006: 79-91.

    [4] [4] Wu Lifan. Design and optimization of CCD image sensor with vertical anti-blooming structure[J]. Modern Electronics Technique, 2010, 33(16): 172-174.

    [5] [5] Wu Lifan. Research on anti-blooming technology in CCD image sensors[J]. Sensor World, 2010, 16(8): 16-19.

    [6] [6] Kazuya Yonemoto. CCD/CMOS Image Sensor No Kiso to Ouyou[M]. Chen Rongting, Peng Meigui, Transl. Beijing: Science Press, 2003.

    [7] [7] Wang Xinyang. Noise in sub-micron CMOS image sensors[D]. Delft: Delft University of Technol., 2008.

    [8] [8] Wen Li, Wang Jianhua. New isolation technology of IC: STI isolation[J]. Micronanoelectronic Technology, 2002, 39(9): 11-12.

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    QU Yang, WANG Xinyang, ZHOU Quan, CHANG Yuchun. Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor[J]. Semiconductor Optoelectronics, 2020, 41(2): 169

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    Paper Information

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    Received: Dec. 23, 2019

    Accepted: --

    Published Online: Jun. 17, 2020

    The Author Email: Xinyang WANG (wangxinyang@ciomp.ac.cn)

    DOI:10.16818/j.issn1001-5868.2020.02.004

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