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Semiconductor Optoelectronics, Volume. 41, Issue 2, 169(2020)

Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor

QU Yang1...2, WANG Xinyang1,2,*, ZHOU Quan3 and CHANG Yuchun4 |Show fewer author(s)
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    QU Yang, WANG Xinyang, ZHOU Quan, CHANG Yuchun. Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor[J]. Semiconductor Optoelectronics, 2020, 41(2): 169

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    Paper Information

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    Received: Dec. 23, 2019

    Accepted: --

    Published Online: Jun. 17, 2020

    The Author Email: Xinyang WANG (wangxinyang@ciomp.ac.cn)

    DOI:10.16818/j.issn1001-5868.2020.02.004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology