Due to its excellent detection ability under low light illumination, time delay integration CMOS image sensor (TDI-CIS) can be applied in aviation detection and satellite remote sensing. However, it is easy to appear blooming phenomenon to affect observation when TDI-CIS is under higher intensity illumination. In this paper, the mechanism of blooming is introduced firstly and a TDI-CIS with rectangle lateral anti-blooming gate which is arranged in vertical direction based on two different anti-blooming structures is designed. Imaging tests indicate that the voltage of anti-blooming gate (VABG) is negatively corrected with anti-blooming and full well capacity (FWC). Finally, the optimal VABG of 2.1V is obtained.