Acta Optica Sinica, Volume. 42, Issue 23, 2312001(2022)

High-Precision Measurement Method of Polarization Aberrations for Large Numerical Aperture (NA=0.55) Variable-Magnification Extreme Ultraviolet Lithography Projection Objective

Ang Li, Yanqiu Li*, Pengzhi Wei, Miao Yuan, and Chengcheng Wang
Author Affiliations
  • Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
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    References(27)

    [1] Chipman R A. Polarization aberration[D](1987).

    [2] Geh B, Ruoff J, Zimmermann J et al. The impact of projection lens polarization properties on lithographic process at hyper-NA[J]. Proceedings of SPIE, 6520, 65200F(2007).

    [3] Jota T S, Chipman R A. Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners[J]. Proceedings of SPIE, 9776, 977617(2016).

    [4] Chen Y L, Liebmann L, Sun L et al. Holistic analysis of aberration induced overlay error in EUV lithography[J]. Proceedings of SPIE, 10583, 105830D(2018).

    [5] Zhu B E, Wang X Z, Li S K et al. High-order aberration measurement method for hyper-NA lithographic projection lens[J]. Acta Optica Sinica, 37, 0412003(2017).

    [6] Liu W, Liu S Y, Zhou T T et al. Aerial image based technique for measurement of lens aberrations up to 37th Zernike coefficient in lithographic tools under partial coherent illumination[J]. Optics Express, 17, 19278-19291(2009).

    [7] Nomura H, Tawarayama K, Kohno T. Higher-order aberration measurement with printed patterns under extremely reduced sigma illumination[J]. Proceedings of SPIE, 3679, 358-367(1999).

    [8] Kirk J P, Kunkel G, Wong A K K. Aberration measurement using in situ two-beam interferometry[J]. Proceedings of SPIE, 4346, 8-14(2001).

    [9] Moers M H P, van der Laan H, Zellenrath M et al. Application of the aberration ring test (ARTEMIS) to determine lens quality and predict its lithographic performance[J]. Proceedings of SPIE, 4346, 1379-1387(2001).

    [10] Kansa T, Shioe Y, Shinoda K. 0.85-NA ArF exposure system and performance[J]. Proceedings of SPIE, 5040, 789-800(2003).

    [11] Dong L S, Li Y Q, Dai X B et al. Measuring the polarization aberration of hyper-NA lens from the vector aerial image[J]. Proceedings of SPIE, 9283, 928313(2014).

    [12] Dong L S. Research on resolution enhancement technology and the vector Imaging theory in optical lithography[D](2014).

    [13] Shen L N, Li S K, Wang X Z et al. Analytical analysis of the impact of polarization aberration of projection lens on lithographic imaging[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 14, 043504(2015).

    [14] Li E Z, Li Y Q, Sheng N Y et al. A nonlinear measurement method of polarization aberration in immersion projection optics by spectrum analysis of aerial image[J]. Optics Express, 26, 32743-32756(2018).

    [15] Xiang Z B, Li Y Q. Retrieve polarization aberration from image degradation: a new measurement method in DUV lithography[J]. Proceedings of SPIE, 10460, 458-474(2017).

    [16] Ma X, Li Y Q, Guo X J et al. Vectorial mask optimization methods for robust optical lithography[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 11, 043008(2012).

    [17] Li Y Q, Dong L S, Wang J M. A method for analyzing the spatial image of high numerical aperture imaging system[P].

    [18] Li Y Q, Dong L S, Ma X. A method of obtaining three-dimensional vector image of mask based on Abbe vector imaging model[P].

    [19] Haddadnia J, Ahmadi M, Faez K. An efficient feature extraction method with Pseudo-Zernike moment in RBF neural network-based human face recognition system[J]. EURASIP Journal on Advances in Signal Processing, 2003, 1-12(2003).

    [20] van Haver S, Braat J J M, Dirksen P et al. High-NA aberration retrieval with the extended Nijboer-Zernike vector diffraction theory[J]. Journal of the European Optical Society: Rapid Publications, 2, 07011e(2007).

    [21] Wong A K, Guerrieri R, Neureuther A R. Massively parallel electromagnetic simulation for photolithographic applications[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, 1231-1240(1995).

    [22] Burger S, Köhle R, Zschiedrich L et al. Benchmark of FEM, waveguide and FDTD algorithms for rigorous mask simulation[J]. Proceedings of SPIE, 5992, 378-389(2005).

    [23] Li E Z, Li Y Q, Liu Y et al. Rigorous imaging-based measurement method of polarization aberration in hyper-numerical aperture projection optics[J]. Optics Express, 29, 20872-20888(2021).

    [24] Li E Z. High-precision imaging-based measurement method for the Jones pupil of polarization aberration of lithography projection objective[D](2021).

    [25] Xiang Z B. A new method of in-situ polarization aberration measurement for lithography projection lens[D](2017).

    [26] Haque R R, Levinson Z, Smith B W. 3D mask effects of absorber geometry in EUV lithography systems[J]. Proceedings of SPIE, 9776, 97760F(2016).

    [27] Liu Y, Li Y Q, Cao Z. Design of anamorphic magnification high-numerical aperture objective for extreme ultraviolet lithography by curvatures combination method[J]. Applied Optics, 55, 4917-4923(2016).

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    Ang Li, Yanqiu Li, Pengzhi Wei, Miao Yuan, Chengcheng Wang. High-Precision Measurement Method of Polarization Aberrations for Large Numerical Aperture (NA=0.55) Variable-Magnification Extreme Ultraviolet Lithography Projection Objective[J]. Acta Optica Sinica, 2022, 42(23): 2312001

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    Paper Information

    Category: Instrumentation, Measurement and Metrology

    Received: May. 17, 2022

    Accepted: Jun. 11, 2022

    Published Online: Dec. 14, 2022

    The Author Email: Li Yanqiu (liyanqiu@bit.edu.cn)

    DOI:10.3788/AOS202242.2312001

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