[1] [1] Fatemi N S, Pollard H E, Hou HQ, et al. Solar array trades between very highefficiency multijunction Si space solar cells[C]IEEE Photovoltaic Specialists Conference. IEEE, 2000.

[2] X B Xiang, W H Du, X L Chang, et al. The study on high efficient Al_xGa_1−xAs/GaAs solar cells. Solar Energy Materials and Solar Cells, 68, 97-103(2001).

[3] Yonggang Zou, Lin Li, Guojun Liu, et al. Research progress of GaAs solar cell. Journal of Changchun University of Science and Technology (Natural Science Edition), 33, 44-47(2010).

[4] R C Knechtli, R Y Loo, G S Kamath. High-efficiency GaAs solar cells. IEEE Transactions on Electron Devices, 31, 577-588(1984).

[5] [5] Mukind R P. Spacecraft Power Systems[M]. New Yk: CRC Press, 2005: 10231028.

[6] H Iwata, K Asakawa. Accumulative damage of GaAs and InP surfaces induced by Multiple-Laser-Pulse irradiation. Japanese Journal of Applied Physics, 47, 2161-2167(2008).

[7] G Li, H Zhang, G Zhou, et al. Research on influence of parasitic resistance of InGaAs solar cells under continuous wave laser irradiation. Journal of Physics: Conference Series, 84, 12-14(2017).

[8] X Wang, Z H Shen, J Lu, et al. Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes. Journal of Applied Physics, 108, 33103(2010).

[9] Daoyuan Tang, Jianming Xu, Yunpeng Li, et al. Damage effects of tri-junction GaAs solar cells irradiated by continuous-wave laser in vacuum. Aerospace Shanghai, 37, 54-60(2020).

[10] [10] Li Yongfu. Study on damage mechanism of GaAs material by intense laser [D]. Jinan: Shong University, 2007. (in Chinese)

[11] [11] Qi Haifeng. Research on surface damage of GaAs induced by continuous nanosecond pulse laser [D]. Jinan: Shong University, 2008. (in Chinese)

[12] [12] Qiu Dongdong. Damage effects research of silicon solar cells silicon ccd induced by laser [D]. Changsha: National University of Defense Technology, 2010. (in Chinese)

[13] Dongdong Qiu, Rui Wang, Xiang′ai Cheng, et al. Damage effect of monocrystalline silicon solar cells under ultrashort pulse laser irradiations. Infrared and Laser Engineering, 41, 112-115(2012).

[14] [14] Tian Xiuqin. Perfmance research of silicongallium arsenide solar cells under femtosecond high power laser illumination [D]. Changsha: Central South University, 2014. (in Chinese)

[15] Xiuqin Tian, Si Xiao, Shaohua Tao, et al. Damage threshold research of monocrystalline silicon solar cellsunder femtosecond laser illumination. Infrared and Laser Engineering, 43, 676-680(2014).

[16] Weiming Lu, Xing Li, Fute Zhang, et al. Defect detection of solar cell based on electroluminescence and thermography imaging with different bias voltage. Chinese Journal of Luminescence, 35, 1511-1519(2014).

[17] Y H Li, M Pan, A S Pang, , et al. The application of electroluminescence imaging to detection the hidden defects in silicon solar cells. Chinese Journal of Luminescence, 32, 378-382(2011).

[18] Hao Chang, Yifu Chen, Weijing Zhou, et al. Damage characteristics of the solar cells irradiated by nanosecond pulsed lasers and the effects on photoelectric conversion. Infrared and Laser Engineering, 50, 20210296(2021).