Infrared and Laser Engineering, Volume. 52, Issue 2, 20210870(2023)

Damage characteristics of solar cells irradiated by picosecond pulsed lasers (invited)

Weijing Zhou, Ming Wen, Hao Chang*, Yifu Chen, Gang Ji, Yingjie Ma, Zhilong Jian, and Yujie Liao
Author Affiliations
  • State Key Laboratory of Laser Propulsion & Its Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing 101416, China
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    Figures & Tables(17)
    Construction of the experiment system
    Typical three-junction GaInP2/GaAs/Ge battery sample
    Distribution of metal grid electrodes on the surface of solar cell
    Changes of I-V characteristics of three-junction GaInP2/GaAs/Ge battery at non-grid line under picosecond laser irradiation
    Characteristics of maximum electrical output power of three-junction GaInP2/GaAs/Ge battery vs voltage at the non-grid line under picosecond laser irradiation
    Characteristics of maximum electrical output power of three-junction GaInP2/GaAs/Ge battery vs laser power at non-grid line under picosecond laser irradiation
    Changes of surface damage morphology of three-junction GaInP2/GaAs/Ge cell at non-grid line under picosecond laser irradiation
    Changes of electroluminescence characteristics at the non-grid parts of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Changes of relatively luminous intensity at non-grid line of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser
    Changes of I-V characteristics of gate line of three-junction GaInP2/GaAs/Ge battery irradiated by picosecond laser
    Characteristics of maximum output power at grid line of three-junction GaInP2/GaAs/Ge battery vs voltage irradiated by picosecond pulse laser
    Changes of maximum output electric power at grid line of three-junction GaInP2/GaAs/Ge battery irradiated by picosecond laser
    Changes of grid lines of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Electroluminescent changes of grid lines of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Characteristics of relatively luminous intensity change with laser power after multi-pulse irradiation of picosecond pulse laser on the grid electrode of three-junction GaInP2/GaAs/Ge battery
    • Table 1. Maximum power reduction of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser at the non-grid line area

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      Table 1. Maximum power reduction of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser at the non-grid line area

      Laser power/mW1.5151501500375015000
      Reduction of battery power3.4%17.2%27.6%27.6%37.9%48.3%
    • Table 2. Maximum power reduction of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser at the grid line area

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      Table 2. Maximum power reduction of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser at the grid line area

      Laser power/mW0.150.751.515150
      Reduction of battery power3.4%65.5%75.9%94.1%94.8%
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    Weijing Zhou, Ming Wen, Hao Chang, Yifu Chen, Gang Ji, Yingjie Ma, Zhilong Jian, Yujie Liao. Damage characteristics of solar cells irradiated by picosecond pulsed lasers (invited)[J]. Infrared and Laser Engineering, 2023, 52(2): 20210870

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    Paper Information

    Category: Invited paper

    Received: Oct. 13, 2022

    Accepted: --

    Published Online: Mar. 13, 2023

    The Author Email: Chang Hao (changhao5976911@163.com)

    DOI:10.3788/IRLA20210870

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